2SC3225 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE SWITCHING APPLICATIONS SOLENOID DRIVE APPLICATIONSAPPLICATIONS I 2slglf)clfe, I0 High DC Current Gain : hFE = 500 (Min.) (10 = 400 mA)OJSMAX0 Low Sat ..
2SC3230 , Silicon NPN Power Transistors
2SC3233 ,Transistor Silicon NPN Triple Diffused Type Switching Regulator and High Voltage Switching Applications High Speed DC-DC Converter ApplicationsApplications High Speed DC-DC Converter
2SC3233 ,Transistor Silicon NPN Triple Diffused Type Switching Regulator and High Voltage Switching Applications High Speed DC-DC Converter ApplicationsApplications Excellent switching times: t = 1.0 µs (max) r t = 1.0 µs (max), (I = 0.8 A) f C ..
2SC3233 ,Transistor Silicon NPN Triple Diffused Type Switching Regulator and High Voltage Switching Applications High Speed DC-DC Converter Applications2SC3233 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC3233 Switching Regulator and Hig ..
2SC3242 , FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SJ612 ,Medium Output MOSFETsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SJ613 ,Medium Output MOSFETsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SJ615 ,Medium Output MOSFETsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SJ620 ,Field Effect Transistor Silicon P Channel MOS Type (L2-PI-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications
2SJ621 ,Pch enhancement type MOS FETDATA SHEETMOS FIELD EFFECT TRANSISTOR 2SJ621P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGD ..
2SJ621 ,Pch enhancement type MOS FETFEATURES1• 1.8 V drive available 2• Low on-state resistanceRDS(on)1 = 44 mΩ MAX. (VGS = –4.5 V, ID ..
2SC3225
TRANSISTOR SILICON NPN EPITAXIAL TYPE SWITCHING APPLICATIONS SOLENOID DRIVE APPLICATIONS
TOSHIBA 2SC3225
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE
2SC3225
SWITCHING APPLlCTlONS Unit in mm
SOLENOID DRIVE APPLICATIONS 5.1 MAX.
0 High DC Current Gain : hFE = 500 (Min.) (IC = 400 mA) g
0 Low Saturation Voltage .' VCE (sat) = 0.5 V (Max.) (10 = 300 mA) 0.75MAX‘
LOMAX. -
MAXIMUM RATINGS (Ta = 25°C) 0.8MAX. S , g
CHARACTERISTIC SYMBOL RATING UNIT ru" 2
Collector-Base Voltage VCBO 40 V . H
Collector-Emitter Voltage VCEO 40 V 1 3127
Emitter-Base Voltage VEBO 7 V li, g
Collector Current IC 2 A ’_._. s-):':',. 5
Base Current IE 0.5 A m m w ' E
Collector Power Dissipation PC 900 mW 1 EMITTER c
J unction Temperature Tj 150 °C I COLLECTOR
Storage Temperature Range Tstg -55--150 "C l BASE
JEDEC TO-92MOD
JEITA -
TOSHIBA 2-5J1A
Weight : 0.36g (Typ.)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 40V, IE = 0 - - 10 PA
Emitter Cut-off Current IEBO VEB = 7V, IC = 0 - - 1 pdk
Collector-Emitter Breakdown
Voltage V (BR) CEO 10 - 10 mA, IB - 0 40 - - V
DC Current Gain hFE VCE = 1 V, IC = 400 mA 500 - -
Collector-Emitter Saturation
Voltage VCE (sat) IC - 300 mA, IB - 1 mA - 0.3 0.5 V
Base-Emitter Saturation
Voltage VBE (sat) IC - 300 mA, IB - 1 mA - - 1.1 V
Transition Frequency fT VCE = 2V, IC = 100mA - 220 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = o, f = 1 MHz - 20 - pF
Trun-On Time ton H'us 11tl - - 1.0 -
. hi 0 PUT
37:“ mg Storage Time tstg lic,'," IB2 ii - 3.0 ps
1 e VCC = 30V
. IBI = -IB2 = 1mA
1 2001-11-05
TOSHIBA 2SC3225
IC - VCE A VCE -1C
COMMONEMITTER V COMM0NEMITTER
A Ta = 25°C ti Ta = 25°C
0 1 2 3 4 5 6 7 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT 1C (A)
VCE -IC VCE -1C
COMMON EMITTER
Ta = 100°C
COMMON EMITTER
Ta = -55t
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER VOLTAGE VCE
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
COLLECTOR CURRENT IC (A) COLLECTOR CURRENT 10 (A)
hFE - IC VCE(sat) - IC
COMMON EMITTER COMMON EMITTER
3000 VCE=1V 3 Ic/IB=300
500 0.5 Ta = 100°C
300 0.3
DC CURRENT GAIN hFE
VOLTAGE VCE (sat) (V)
100 0.1
COLLECTOR-EMITTER SATURATION
50 0.05
30 0.03
0.01 0.03 0.1 0.3 1 3 0.01 0.03 0.1 0.3 1 3
COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A)
2 2001-11-05
TOSHIBA
VBE (sat) - IC
COMMON EMITTER
2 IC/IB = 300
ie 3‘3
g E Ta = -55'C
tit! 25
''iiria', 100
0.01 0.03 0.1 0.3 1
COLLECTOR CURRENT 10 (A)
PC - Ta
PC (mW)
COLLECTOR POWER DISSIPATION
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta (°C)
10 (A)
COLLECTOR CURRENT
COLLECTOR CURRENT 10 (A)
2SC3225
IC - VBE
COMMON EMITTER
VCE = 1 v
25 -55
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE-EMITTER VOLTAGE VBE (V)
SAFE OPERATING AREA
5 IC MAX (PULSED) .)k I l I I I
IC MAX (CONTINUOUS) ‘N A 1 mm
"s, 10 ms..is h
N 'fii)...s, \
1 100 ms8.. ', ',
0.5 I DC OPERATION N _ _ h
0.3 _ Ta = 25°C ,
'N, S .
>:< SINGLE NONREPETITIVE N
0.05 PULSE Ta = 25''C \\
0.03 CURVES MUST BE DERATED
LINEARLY WITH INCREASE
0 01 IN TEMPERATURE. VCEO MAX
0.1 0.3 1 3 10 30
c0LLEcT0RaMITTER VOLTAGE VCE (V)
TOSHIBA 2SC3225
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2001-11-05
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