2SC3182 ,Silicon NPN Power Transistors TO-3P(I) packageSILICON NPN TRIPLE DIFFUSED TYPEPOWER AMPLIFIER
2SC3182 ,Silicon NPN Power Transistors TO-3P(I) packageSILICON NPN TRIPLE DIFFUSED TYPEPOWER AMPLIFIER
2SC3182 ,Silicon NPN Power Transistors TO-3P(I) packageSILICON NPN TRIPLE DIFFUSED TYPEPOWER AMPLIFIER
2SC3182N , Silicon NPN Power Transistors
2SC3183 ,NPN Triple Diffused Planar Silicon Transistor 800V/0.2A Switching Regulator ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3184 ,NPN Triple Diffused Planar Silicon Transistor 800V/0.5A Switching Regulator ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SJ596 ,P-Channel Silicon MOSFET DC / DC Converter ApplicationsFeatures Package Dimensions•Low ON-resistance. unit : mm• Ultrahigh-speed switching. 2083B• 4V driv ..
2SJ597 ,P-Channel Silicon MOSFET DC / DC Converter ApplicationsFeatures Package Dimensions• Low ON-resistance.unit : mm• Ultrahigh-speed switching.2083B• 4V drive ..
2SJ598 , SWITCHING P-CHANNEL POWER MOS FET
2SJ598-Z ,P-ch power MOSFET 60V RDS(on)MAX.=130m ohm TO-251, TO-252ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX.UNIT Ze ..
2SJ599 ,Pch power MOSFET 60V RonMAX=75m ohm MP-3ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX.UNIT Ze ..
2SJ599-Z ,Pch power MOSFET 60V RonMAX=75m ohm MP-3FEATURES • Low on-state resistance: RDS(on)1 = 75 mΩ MAX. (VGS = –10 V, ID = –10 A) RDS(on)2 = 1 ..
2SC3182
Silicon NPN Power Transistors TO-3P(I) package
SILICON NPN TRIPLE DIFFUSED TYPE 2SO31 8 2
POWER AMPLIFIER APPLICATIONS. . . . Unit in mm
59MAX 5532:02
FEATURES: f
3 / 3 'd.
. Complementary to 28A1265
' Recommend for 70w High Fidelity Audio Frequency . (Yi) "il,
Amplifier Output Stage g 3 4) F . -n 3
n O. O N
HS N G
2.0103 l il
+030 1 Si
LO-t26
MAXIMUM RATINGS (Ta=2500) 545*” s565ta2 x-
. CQ.H
CKARACTitRrSTrC SYMBOL RATING UNIT 3 'ti' 3 g
Collector-Base Voltage VCBO 140 :3 ct -fsr. - 1 ll
- - --rs-- 4
Collector-emitter Voltage VCEO 140 ll 1 "
Emitter-Bake Voltage VEBO 5 ll I. BASE
Collector Current lc 10 A 2. COLLECTOR (HEAT SINK)
Il EMITTER
Base Current IB 1 A t
c 11 t P Di tp ti JEDEC -
o ec or ower 1531 a lon
(Tc=25°C) PC 100 w EIAJ -
. 150 o TOSHIBA ' 2-1691A
Junction Temperature To' oC Weight I 4.6g
Storage Temperature Range Tstg -55--150 C
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current IcBO VCB=140V, IE=0 - - 5.0 PA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 5.0 ph
Collector-emitter _ = - -
Breakdown Voltage V(BR)CEO rc-VA, IB 0 140 v
*(‘gggg vCE=5v, IC=1A 55 - 160
DC Current Gain .
. r hFE(2) VCE=5V, Ic=5A . 35 83 -
Collector'Emitter
. . = = - . 2.
SaturatiOn Voltage . VCHSBC) tc M, 13 0.7A 0 3 0 V
Base-Emiteer Voltage VBE var--5v, Ic=5A - 0.9 1.5 ll
Transition Frequency fT VCE=5V, IC=1A - 30 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.20.' - pF
Note I hFE(1) Classification R t 55~110, O I 80~160
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COLLECTOR CURRENT 10 (A)
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COLLECTOR CURRENT 1C (A)
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CoyLEoTort--EMrTrm VOLTAGE VCE (V)
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