2SC3181 ,Silicon NPN Power Transistors TO-3P(I) packageFEATURES:. Complementary to 2SAI264:03. Recommend for 55w High Fidelity Audio Frequency20.0Amplifie ..
2SC3182 ,Silicon NPN Power Transistors TO-3P(I) packageSILICON NPN TRIPLE DIFFUSED TYPEPOWER AMPLIFIER
2SC3182 ,Silicon NPN Power Transistors TO-3P(I) packageSILICON NPN TRIPLE DIFFUSED TYPEPOWER AMPLIFIER
2SC3182 ,Silicon NPN Power Transistors TO-3P(I) packageSILICON NPN TRIPLE DIFFUSED TYPEPOWER AMPLIFIER
2SC3182N , Silicon NPN Power Transistors
2SC3183 ,NPN Triple Diffused Planar Silicon Transistor 800V/0.2A Switching Regulator ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SJ591LS ,P-Channel Silicon MOSFET DC / DC Converter ApplicationsAbsolute Maximum Ratings at Ta=25°C SANYO : TO-220FI(LS)Parameter Symbol Conditions Ratings UnitDra ..
2SJ596 ,P-Channel Silicon MOSFET DC / DC Converter ApplicationsFeatures Package Dimensions•Low ON-resistance. unit : mm• Ultrahigh-speed switching. 2083B• 4V driv ..
2SJ597 ,P-Channel Silicon MOSFET DC / DC Converter ApplicationsFeatures Package Dimensions• Low ON-resistance.unit : mm• Ultrahigh-speed switching.2083B• 4V drive ..
2SJ598 , SWITCHING P-CHANNEL POWER MOS FET
2SJ598-Z ,P-ch power MOSFET 60V RDS(on)MAX.=130m ohm TO-251, TO-252ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX.UNIT Ze ..
2SJ599 ,Pch power MOSFET 60V RonMAX=75m ohm MP-3ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX.UNIT Ze ..
2SC3181
Silicon NPN Power Transistors TO-3P(I) package
TOSHIBA 4H)ISCfeETfiv0PT()1. Si, os:0nrvrizsn [10075145 7
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l 9097250 TOSHIBA (DISCRETE/OPTO) 56C, 07648 or-ss-d
! SILICON NPN TRIPLE DIFFUSED TYPE 2SC3 1 81
POWER AMPLIFIER APPLICATIONS. Unit in mm
l 159MAX. eAxtsac-ire,
FEATURES: 8 S 2-
. Complementary to 2SAI26K .CE ___..,,
. . Q ' d
. Recommend for 5W ngh Fidelity Audio Frequency ': 9 . €___ J
Amplifier Output Stage. 3 t) 's'eri 3
010.3 I l il;
us r-4
o 545i0 545:02
MAXIMUM RATINGS (Ta=25 C) tor-t g
i CHARACTERISTIC SYMBOL RATING UNIT ‘2 Si? tD 5
<1 pl .
Collector-Base Voltage VCBO 120 V h' 'Ire-os-sn, il-
Collector-Emitter Voltage ch0 120 V
Emitter-Base Voltage VEBO V 1. BASE
Collector Current Ic A a. COLLECTOR (HEAT SINK)
5 EMITTER
Base Current IB 0.8 A
C llector Pow r Dissipation JEDEC _
(Tc=25°C) PC 80 w BIAJ -
Junction Temperature To' 150 :C 'TU',', t 4.6g a--16BIA
Storage Temperature Range Tstg -55 --150 C
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP, MAX. UNIT
Collector Cut-off Current ICBO VC3=120V, IE=O - - 5.0 "
Emitter Cut-off Current IEBO VEB=5V, IC=O - - 5.0 uA
Collector-Emitter
= = - - v
Breakdown Voltage V(BR)CE0 IC 50nA, IB 0 120
mm) = = -
DC Current Gain (Note) VCE 511, lc 1A 55 160
hpuz) VCE=5V, IC=4A 35 75 -
Collector Emitter .
Saturation Voltage vows“) TC=6A, IB=0.6A - 0.35 2.0 v
Base-Emitter Voltage VBE VCE=5V, IC=4A - 0,95 1.5 V
Transition Frequency fa: VCE--'5V, IC=1A - 30 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=lMllz - 190 - pF
Note l hFE(1) Classification, R , 55-110 O t 80--160
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This Material Copyrighted By Its Respective Manufacturer
TOSHIBA {DISCRETE/OF‘TO}
Si, DE [lnivri'iesio CliMri%tl'3 n [I—
9097250 TOSHIBA (DISCRETE/OPTO) ”5cm 07049 D T'EB‘IB
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Io - VCE Ic - VBE
COMMON EMITTER cf, COMMON
- . EMHTH
2 200 Tc =2 5 C Jd V 5 lf
V 8 6 CE:
" 150 H
E 6 a l o
w. o "f
E' m ,
3 a F,
o o tll a8 1.2 L6 ao
o BME-tBUTTER VOLTAGE v53 (v)
4 . O V -
COLLECTOR-gli') VOLTAGE VCE (V) (sat) C
,1 COMMON EMITTER
M > a I /I :10
hmg - 10 E 9: V a
1000 E [3 C?
COMMON EMITTER H o d
31 60 " '5
P VCE=5V I = , a
t 30 g S >
E Tc=1oot g: a
_ 25 A r.) o,
Ct 100 A F
bs 0 "
2 O (D
E 50 tlol
ir, 30 001 uos a1 us 1 3 10
o COLLECTOR CURRENT Io (A)
SAFE OPERATING AREA
u% 3 I IIIIHH
05 tll 03 l 3 10 -IC MAX (PULSED)>~<
COLLECTOR CURRENT 1c (A) l I l I Hill
C? IO_IC MAX (CONTINUOUS) - -
- ' Br t"
" I0 I I N I', 'i', 9 -
f? s tl ho a ')'.e----r
COMMON EMITTER o a mu . -
100 . a Co. 'e, tvf.' #
VCE=5V = 3 ot 'ty N,
t' Te---ast; M i',, te N N
z 50 g ty Ry l I
g GO D l
52]" 05 1 I r,r
bt O - - I
w, g a I
31,10 g I
E k til 05: M. SINGLE NONREPETITIVE 1
g. o 03- PULSE Tc 25c r 3
a 3 - CURVES MOST BE DERATED .
H LINEARLY WITH INCREASE 8
IN TEMPERATURE fr'
1 tll 1 n I I l trrt I 1
aol nos ill a3 1 s 10 1 ' s 10 30 um
COLLECTOR CURRENT lg (A) ooriPec'1roR-BMrT'rm" VOLTAGE VCE (v)
TOSHIBA CORPORATION IllllllllllllllllllHlIlllllllllllll|Illllllllllllllllllll||||llllllllIlllHllllHIlllHllllllllllllllllIll|IIIllllllllllll|lllllllllllllllllllllllllllllHlllllllll|lullllulllIllllll|lll|IIHIIIHIIllllllllllllllllllll
This Material Copyrighted By Its Respective Manufacturer
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