2SC3148 ,Silicon NPN Power Transistors TO-220C packageAPPLICATIONS. I I1nRMAX (£3,6i021Excellent Sw1tch1ng '1'1mes (10:0.8A)1n 1;" I 1n ,MTT? AA -[1,11tr ..
2SC3149 ,NPN Triple Diffused Planar Silicon Transistor 800V/1.5A Switching Regulator ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3150 ,POWER TRANSISTORS(3A,800V,50W)Ordering number:EN1069CNPN Triple Diffused Planar Silicon Transistor2SC3150800V/3A Switching Regula ..
2SC3152 ,NPN Triple Diffused Planar Silicon Transistor 800V/3A Switching Regulator ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3153 ,POWER TRANSISTORS(6A,800V,100W)Absolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3159 , Silicon NPN Power Transistors
2SJ576 , Silicon P Channel MOS FET High Speed Switching
2SJ577 ,High Output MOSFETsFeatures Package Dimensions · Low ON-resistance.unit:mm · Ultrahigh-speed switching.2093A · Low-vol ..
2SJ578 ,P-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SJ579 ,P-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SJ580 ,P-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SJ583LS ,P-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SC3148
Silicon NPN Power Transistors TO-220C package
TOSHIBA
2SC3148
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
2SC31l48
SWITCHING REGULATOR AND HIGH VOLTAGE.
SWITCHING APPLICATIONS.
INDUSTRIAL APPLICATIONS
Unit in mm
HIGH SPEED DC-DC CONVERTER APPLICATIONS.
10.3MAX. /2-6'-0.2
o Excellent Switching Times (IC=O.8A) h-dif"l-'el g z:
tr=1.0ps Max., tf=1.0ps Max. w' 3,.
q High Collector-Emitter Breakdown Voltage : VCEO=800V P
2‘ ! '
MAXIMUM RATINGS (Ta = 25°C) 3 t g
CHARACTERISTIC SYMBOL RATING UNIT 1.3 0 76 _ I 2 l
Collector-Base Voltage VCBO 900 V V ti
Collector-Emitter Voltage VCEO 800 V F,
Emitter-Base Voltage VEBQ 7 V iii,
DC I 3
Collector Current C A
Pulse ICP 5
Base Current 1B 1 A 1. BASE
o 2. COLLECTOR (HEAT SINK)
Collector Power Ta=25 C 1.5 3. EMITTER
Dissipation T =25t PC 40 W
. c= JEDEC TO-220AB
J unctlon Temperature Tj 150 'C EIAJ SC 46
Storage Temperature Range Tstg -55--150 "C -
TOSHIBA 2-10A1A
ELECTRICAL CHARACTERISTICS (Ta =25°C) Weight .' 1.9g
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=8OOV, IE=0 - - 100 PA
Emitter Cut-off Current IEBO VEB=7V, I020 - - 1 mA
Collector-Base Breakdown - -
Voltage V (BR) CBO IC - lmA, IE - 0 900 - - V
Collector-Emitter Breakdown
Voltage V (BR) CEO IC = 10mA, 13:0 800 - - V
DC Current Gain hFE VCE=5V, 10:0.8A 10 - -
Collector-Emitter Saturation
Voltage VCE (sat) IC = 0.8A, IB = 0.16 A - - 0.6 V
Base-Emitter Saturation Voltage VBE (sat) Ic=0.8V, IB=O.16A - - 1.2 V
2 VCC 2.4 0V
Rise Time tr IBI 0 5 8 - - 1.0
_ _ _ i1sTlaB2 IB1
Switching Time Storage Time tstg INPUT Ev fhRi- - - 4.0 ,us
2,1c-1tt,, 1132
. B1: - . - -
Fall Time tf DUTY CYCLES 1% 1.0
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibilit
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TO HIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
of the buyer, when utilizing
1997-09-01 1/3
TOSHIBA 2SC3148
IC - VCE hFE - IC
COMMON EMITTER COMMON EMITTER
2 Tc = 25°C =
V 4 H 50 VCE 5V
F a 30 TC=100T
S “5 10
O IB=20mA 5
0 2 4 6 8 10 12 14 0.03 0.1 0.3 1 3
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT 10 (A)
VBE (sat) - IC
VCE (sat) - IC
COMMON EMITTER
IC / 18 = 5
Tc = 100°C
BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (V)
COMMON EMITTER
IC / IB = 5
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
0.03 0.1 0.3 1 3
0.1 0.3 1 3
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
SWITCHING TIME - IC
IC - VBE
A COMMON EMITTER Ic -- 10 1131 -- - 51132
S VCE = 5V li PULSE
S? 3 v WIDTH=20/zs
F E: DUTY CYCLES1%
E / / / g; Tc=25°C
ttt 2 J I U
0 Tc = 100''C 7 iii
o / -55
0 A / I .1
o 0.2 0.4 0.6 0.8 1.0 1.2 0.05 0.1 0.3 1 3 10
BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT 10 (A)
961001EAA2'
O The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights o the third games which may result from its use. No license is granted
by implication or otherwise under any intellectual property or other rights of TOSHIBA C RPORATION or others.
0 The information contained herein is subject to change without notice.
1997-09-01 2/3
TOSHIBA
2SC3148
[C (A)
COLLECTOR CURRENT
SAFE OPERATING AREA
MAX. (PULSED) X 3msX lmsX 100 X 0
IC MAX.
CONTINUO
1 10msik
DC OPERATION
Tc=25°C
X SINGLE
0 03 NONREPETITIVE
PULSE Tc=25°C
CURVES MUST BE DERATED
0.005 LINEARLY WITH INCREASE
0.003 ll TEMPERATURE.
VCEO MAX.
10 30 100 300
COLLECTOR-EMITTER VOLTAGE VCE (V)
rth-tw
CURVES SHOULD BE APPLIED IN THERMAL
LIMITED AREA.
(SINGLE NONREPETITIVE PULSE)
T INFINITE IIEAT SINK
© NO HEAT SINK
(°C/W)
TRANSIENT THERMAL RESISTANCE
0.001 0.01 0.1 1 10 100 1000
PULSE WIDTH tw (s)
COLLECTOR DISSIPATION PC (W)
0 40 80 120 160 200 220
CASE TEMPERATURE Tc (°C)
1997-09-01 3/3
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