2SC3138 ,Transistor Silicon NPN Triple Diffused Type (PCT process) High Voltage Switching ApplicationsApplications Unit: mm High voltage: V = 200 V (max) CBO V = 200 V (max) CEO Small flat pack ..
2SC3142 ,NPN Epitaxial Planar Silicon Transistor High-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3143 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, AF Power Amp, 100W Output Predriver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3144 ,NPN Epitaxial Planar Silicon Darlington Transistors 60V/3A for High-Speed Drivers ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3148 ,Silicon NPN Power Transistors TO-220C packageAPPLICATIONS. I I1nRMAX (£3,6i021Excellent Sw1tch1ng '1'1mes (10:0.8A)1n 1;" I 1n ,MTT? AA -[1,11tr ..
2SC3149 ,NPN Triple Diffused Planar Silicon Transistor 800V/1.5A Switching Regulator ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SJ557 ,P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHINGFEATURES12• Can be driven by a 4 V power source• Low on-state resistance0.650.95 0.95RDS(on)1 = 155 ..
2SJ557-T1B ,Pch enhancement type MOS FETFEATURES12• Can be driven by a 4 V power source• Low on-state resistance0.650.95 0.95RDS(on)1 = 155 ..
2SJ559 ,P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHINGFEATURES+0.10.2–0• Can be driven by a 2.5 V power source.0.6• Low gate cut-off voltage.0.5 0.50.75 ..
2SJ559-T1 ,Pch enhancement type MOS FETFEATURES+0.10.2–0• Can be driven by a 2.5 V power source.0.6• Low gate cut-off voltage.0.5 0.50.75 ..
2SJ560 ,P-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SJ562 ,P-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SC3138
Transistor Silicon NPN Triple Diffused Type (PCT process) High Voltage Switching Applications
2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC3138 High Voltage Switching Applications High voltage: VCBO = 200 V (max) VCEO = 200 V (max) Small flat package Complementary to 2SA1255
Maximum Ratings (Ta ��� � 25°C)
Marking Unit: mm
Weight: 0.012 g (typ.)
