2SC3134 ,NPN Epitaxial Planar Silicon Transistors High Vebo, AF Amp ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3135 ,NPN Epitaxial Planar Silicon Transistors High-hFE, AF Amp ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3138 ,Transistor Silicon NPN Triple Diffused Type (PCT process) High Voltage Switching ApplicationsApplications Unit: mm High voltage: V = 200 V (max) CBO V = 200 V (max) CEO Small flat pack ..
2SC3142 ,NPN Epitaxial Planar Silicon Transistor High-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3143 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, AF Power Amp, 100W Output Predriver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3144 ,NPN Epitaxial Planar Silicon Darlington Transistors 60V/3A for High-Speed Drivers ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SJ550STL-E , Silicon P Channel MOS FET
2SJ550STL-E , Silicon P Channel MOS FET
2SJ553 , Silicon P Channel MOS FET High Speed Power Switching
2SJ553 , Silicon P Channel MOS FET High Speed Power Switching
2SJ557 ,P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHINGFEATURES12• Can be driven by a 4 V power source• Low on-state resistance0.650.95 0.95RDS(on)1 = 155 ..
2SJ557-T1B ,Pch enhancement type MOS FETFEATURES12• Can be driven by a 4 V power source• Low on-state resistance0.650.95 0.95RDS(on)1 = 155 ..
2SC3134
