2SC3122 ,Transistor Silicon NPN Epitaxial Planar Type TV VHF RF Amplifier Applications2SC3122 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3122 TV VHF RF Amplifier
2SC3122 ,Transistor Silicon NPN Epitaxial Planar Type TV VHF RF Amplifier ApplicationsApplications Unit: mm High gain: G = 24dB (typ.) (f = 200 MHz) pe Low noise: NF = 2.0dB (typ ..
2SC3122 ,Transistor Silicon NPN Epitaxial Planar Type TV VHF RF Amplifier ApplicationsApplications Unit: mm High gain: G = 24dB (typ.) (f = 200 MHz) pe Low noise: NF = 2.0dB (typ ..
2SC3123 ,Transistor Silicon NPN Epitaxial Planar Type TV VHF Mixer ApplicationsApplications Unit: mm High conversion gain: G = 23dB (typ.) ce Low reverse transfer capacita ..
2SC3124 ,Transistor Silicon NPN Epitaxial Planar Type TV Tuner, VHF Oscillator ApplicationsApplications Unit: mm Maximum Ratings (Ta 25°C)Characteristics Symbol Rating Unit Collector ..
2SC3125 ,Transistor Silicon NPN Epitaxial Planar Type TV Final Picture IF Amplifier ApplicationsApplications Unit: mm Good linearity of f T Maximum Ratings (Ta 25°C)Characteristics Sym ..
2SJ529 , Silicon P Channel MOS FET High Speed Power Switching
2SJ529 , Silicon P Channel MOS FET High Speed Power Switching
2SJ530 , Silicon P Channel MOS FET High Speed Power Switching
2SJ530STL-E , Silicon P Channel MOS FET
2SJ530STL-E , Silicon P Channel MOS FET
2SJ533 , Silicon P Channel MOS FET High Speed Power Switching
2SC3122
Transistor Silicon NPN Epitaxial Planar Type TV VHF RF Amplifier Applications
2SC3122 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3122 TV VHF RF Amplifier Applications High gain: Gpe = 24dB (typ.) (f = 200 MHz) Low noise: NF = 2.0dB (typ.) (f = 200 MHz) Excellent forward AGC characteristics
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C) VAGC
Note: VAGC measured by test circuit shown in Figure 1 when power gain is reduced to 30dB compared that of VAGC
at 1.4 V.
Unit: mm
Weight: 0.012 g (typ.)
