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2SC3112TOSHIBAN/a200avaiTransistor Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier and Switching Applications


2SC3112 ,Transistor Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier and Switching ApplicationsApplications Unit: mm  High DC current gain h = 600~3600 : FE High breakdown voltage: V = 50 ..
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2SC3112
Transistor Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier and Switching Applications
2SC3112 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3112

For Audio Amplifier and Switching Applications High DC current gain: hFE = 600~3600 High breakdown voltage: VCEO = 50 V High collector current: IC = 150 mA (max)
Maximum Ratings (Ta �
�� � 25°C)
Electrical Characteristics (Ta �
�� � 25°C) VCE � 6 V, IC � 0.1 mA, f � 1 kHz,
RG � 10 k�
Note: hFE classification A: 600~1800, B: 1200~3600
Unit: mm
Weight: 0.21 g (typ.)
ic,good price


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