2SC3099 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure 2 NF = 1.7dB, |S | = 15dB (f = 500 MHz) 21e2 NF = 2 ..
2SC3110 ,Si NPN Epitaxial PlanarAbsolute Maximum Ratings (Ta=25°C)Item Symbol Value Unit2le 77 .-s'-ztitrdE cho 15 Vc::jpf.cr.:iss, ..
2SC3112 ,Transistor Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier and Switching ApplicationsApplications Unit: mm High DC current gain h = 600~3600 : FE High breakdown voltage: V = 50 ..
2SC3113 ,Transistor Silicon NPN Epitaxial Type For Audio Amplifier and Switching ApplicationsApplications Unit: mm High DC current gain h = 600~3600 : FE High breakdown voltage: V = 50 ..
2SC3114 ,NPN Epitaxial Planar Silicon Transistors High-Vebo, AF Amp ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3114-S , TO-92 Plastic Package Transistors (NPN)
2SJ517 , Silicon P Channel MOS FET High Speed Power Switching
2SJ517 , Silicon P Channel MOS FET High Speed Power Switching
2SJ517 , Silicon P Channel MOS FET High Speed Power Switching
2SJ517YYTL-E , Silicon P Channel MOS FET
2SJ518 , Silicon P Channel MOS FET High Speed Power Switching
2SJ518 , Silicon P Channel MOS FET High Speed Power Switching
2SC3099
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications
2SC3099 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3099 VHF~UHF Band Low Noise Amplifier Applications Low noise figure NF = 1.7dB, |S21e|2 = 15dB (f = 500 MHz) NF = 2.5dB, |S21e|2 = 9.5dB (f = 1 GHz)
Maximum Ratings (Ta ��� � 25°C)
Microwave Characteristics (Ta ��� � 25°C) VCE � 10 V, IC � 3 mA, f � 1 GHz
Electrical Characteristics (Ta ��� � 25°C)
VCB � 10 V, IE � 0, f � 1 MHz (Note)
Note: Cre is measured by 3 terminal method with capacitance bridge.
Unit: mm
Weight: 0.012 g (typ.)
