2SC3073 ,SILICON NPN EPITAXIAL TYPE(PCT PROCESS)FEATURES:. Good Linearity of hFE' Complementary to 2SA1243MAXIMUM RATINGS (ia--25oc)CHARACTERISTICC ..
2SC3074 ,Transistor Silicon NPN Epitaxial Type (PCT process) High Current Switching ApplicationsApplications Unit: mm Low collector saturation voltage: V = 0.4 V (max) (I = 3 A) CE (sat) C ..
2SC3074 ,Transistor Silicon NPN Epitaxial Type (PCT process) High Current Switching Applications2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3074 High Current Switch ..
2SC3074-Y , High Current Switching Applications
2SC3074-Y , High Current Switching Applications
2SC3075 ,Transistor Silicon NPN Triple Diffused Type (PCT process) Switching Regulator and High Voltage Switching Applications DC-DC Converter Applications DC-AC Converter ApplicationsApplications DC-AC Converter
2SJ498 , FIELD-EFFECT TRANSISTOR
2SJ498 , FIELD-EFFECT TRANSISTOR
2SJ499 ,P-Channel Silicon MOSFET Load Switching ApplicationsFeatures Package Dimensions•Low ON-state resistance. unit : mm• 4V drive. 2083B[2SJ499]6.52.35.00.5 ..
2SJ499 ,P-Channel Silicon MOSFET Load Switching ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SJ501 ,P-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SJ502 ,P-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SC3073
SILICON NPN EPITAXIAL TYPE(PCT PROCESS)
TOSHIBA tI)TScelrl'C/()PT()1 Si, oclyuyriiso 000753]; l [r
'" I _ __
9097250 TOSHIBA (DISCRETE/OPTO) SbC 07631 UT'33-07
12863 0 7 3 SILICON NPN EPITAXIALTYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS. . .
Unlt 1n mm
CAR RADIO, CAR STEREO OUTPUT STAGE AMPLIFIER aamx g
APPLICATIONS. 523:02 3 OGMAX.
FEATURES.. I
. Good Linearity of hFE f/
. Complementary to 2SA1243 st,
Q95MAX. E.
MAXIMUM RATINGS (Ta=25°C) t16d:t116 'il t16MAX.
CHARACTERISTIC SYMBOL RATING UNIT - D
Collector-Base Voltage VcBo 30 ll as 2.3 b4
Collector-Emitter Voltage VcEO 30 V cl}. ,
Emitter-Base Voltage VEBO S V EEiiELf,
Collector Current IC 3 A
Base Current 13 0.6 A l, BASE
Collector Power Ta=2s°c 1.0 a. common (m)
Dissipation 0 PC ll a EMITTER
.Tc=25 C 10
o JEDEC -
Junction Temperature Td 150 BIAS -
Storage Temirerature Range Tstg -55--150 "c Tosuum 2-'rBIA
Weight t 0.36g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VC3=2.OV, IE=0 - - 1.0 PA
Emitter Cut-off Current IEBO VEB=5V, Ic=0 - - 1.0 ph
Collector-Emitter - _ - -
Breakdown Voltage V(BR)CEO 1c=10mh, IB=0 30 ll
Emitter-Base - - ... -
Breakdown Voltage V(BR)EBO IE=-1trth, IO_O 5 V
hFEu) _ = = -
DC Current Gain (Note) VCE 2V, IC 0.5A 70 2h0
_ hFE(2) VCE=21l,' Ic=2.5A 25 - -
Collector-Emitter - - -
Saturation Voltage VCE(sat) Ity--2A, IB=0.2A 0.3 0.8 ll
Base-Erattter Voltage VBE VCE=2V, Ic=0.5A - 0.75 1.0 V
Transition Frequency fT VCE=2V, Ic=0.5A - 100 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 35 - pF
Note: hpgu) Classification 0 , 70~140, Y ' 120-240
TOSHIBA CORPORATION uuuunmnnunumuInnummmuuumuImumIummmmmuInmmImmmmuuumnuuuuumuunmuunummumnunumumumunnnmmuumumunmulum
TOSHIBA 4H)TSCRETE/(ypT01 Si, 00]]0007050 0007033 3 T
' - _ "i""-""-"'-""'"-"-"-""----- '
53 "-0... . 9097250 TOSH I BA (D I SCRETE / OPTO) --farljTtTTir--tTrrtriiu2i'7 f
28C3073
' Io _ VGE 1 IO-VBR (Low CURRENT REGEON)
COMMON COMMO!‘ EMITTER
' . EMITTER A ch=2V
_ Tc=25'C E
:5 20 J?
o 10 E
',csa'l ii,
IB=3mA
o 02 04 06 08 1.0
0 Blunl--EMfTTBlR VOLTAGE vBE (v)
00 1.6 24 32 4.0
C0LLB0T0R-RuITTBft VOLTAGE VCE (v)
hFE - 10
COMMON EMIT'I‘ER
E 5 VCE=2V
IC - VBE Ct
common EMITTER E
VCE=2V D
C? as co
g k 001 003 ill us 1 5
P. coanc'roa CURRENT re (A)
g VcE(aat) - Ic
g COMMON EMITTER
8 o. 05 Ic/IB=10 _
02 ill 6
BAmr'-HilMr'WNm VOLTAGE VBE (V)
VCE(ea.t) (V)
COLLECTOR—EMITTE‘R SATURATION
VOLTAGE
GOI 0.03 tll us 1 -3
COLLECTOR CURRENT 10(A)
|Illll||lllllll|IIII||llllIIIIIHIIIIIHIIIll||IIIIIIIHIIIHI|||Illlllllllllllllllllllll|||Illllll|HIl||lllllIIIIHIIllflll||lllllllllllll|lllllllllllll||IHIlllHllllllllllllllllllllllll|lIIIlllllulllllllflllllllllll TDB HIBA C On PDRATIDN
TOSHIBA fl)TSCREyl'lr/()pT()y Sl, DEDHUH725U UUD?I=33 5 T
9097250 TOSHIBA (DISCRETE/OPTO) 5tscHjrtr3n
'D"T"33"’07
PC - Ta SAFE OPERATING AREA '
g C) Ta=Tc . I MAX PULSE!) X
;: INFINITE HEAT SINK 10
Ji © cmmmc SUBSTRATE C? 0 l,
g 50X50X08mmt v '
P, NO HEAT SINK 0
cu H 1
, ' 2 as
“(H ii, 03
F n: .
i?, Ib' g (11
3 © o X SINGLE NONREPETJTIVE
8 E (105 PULSE Tc=25'c
20 IO so BO 100 120 140 160 8 ao CURVES MUST BE DERATED
AMBIENT TEMPERATURE Ta ('0) LINEARLY WITH INCREASE
IN TEMPERATURE
"il 03 0.5 1 3 5 10 JO 50 100
CtyLidgWIOR-BMITTER VOLTAGE VGE (V)
TOSHIBA COHPDHA'I'IDN ||I|1lll|lflll|lllllll|IIHIll|Hlllllllllll|lll|ll|HIlllllHI||llllllllmlllIllll||llfllll|llllll|llllllllHlll|IllllllllllllllIIHIllllllllllllllllllllllllllllllHlllll|l|||lllfll||IllllllllllllIllllllllllllllllillll
www.ic-phoenix.com
.
