2SC3069 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3070 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3072 ,Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier ApplicationsApplications High DC current gain : h = 140 to 450 (V = 2 V, I = 0.5 A) FE CE C : h = 70 (mi ..
2SC3073 ,SILICON NPN EPITAXIAL TYPE(PCT PROCESS)FEATURES:. Good Linearity of hFE' Complementary to 2SA1243MAXIMUM RATINGS (ia--25oc)CHARACTERISTICC ..
2SC3074 ,Transistor Silicon NPN Epitaxial Type (PCT process) High Current Switching ApplicationsApplications Unit: mm Low collector saturation voltage: V = 0.4 V (max) (I = 3 A) CE (sat) C ..
2SC3074 ,Transistor Silicon NPN Epitaxial Type (PCT process) High Current Switching Applications2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3074 High Current Switch ..
2SJ486ZU-TL-E , Silicon P Channel MOS FET
2SJ492 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDS ..
2SJ493 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDS ..
2SJ494 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEDATA SHEETMOS FIELD EFFECT POWER TRANSISTORS2SJ494SWITCHING P-CHANNEL POWER MOS FET INDUS ..
2SJ495 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEDATA SHEETMOS FIELD EFFECT POWER TRANSISTORS2SJ495SWITCHING P-CHANNEL POWER MOS FET INDUS ..
2SJ496 , Silicon P-Channel MOS FET High Speed Power Switching
2SC3069
