2SC3042 ,NPN Triple Diffused Planar Silicon Transistor 400V/12A Switching Regulator ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3052 , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC3052 , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC3052 , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC3063 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC3064 ,NPN Epitaxial Planar Silicon CompositeTransistorAbsolute Maximum Ratings at Ta=25°C _ unitCollector to Base Voltage Ircrso 55 IrCellector to Emitte ..
2SJ456 ,Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SJ460 ,P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHINGFEATURES
0 Can be driven by a 2.5 V power source.
0 Not necessary to consider driving current b ..
2SJ461 ,P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHINGFEATURES
0 Can be driven by a 2.5 V power source.
0 Not necessary to consider driving current b ..
2SJ462 ,P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHINGDATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ462P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR HIGH S ..
2SJ463A ,P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHINGFEATURES 31• Can be driven by a 2.5 V power source.• Low Gate Cut-off Voltage.MarkingABSOLUTE MAXI ..
2SJ465 ,DC .DC Converter, Relay Drive and Motor Drive Applications
2SC3042
