2SC2983 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Driver Stage Amplifier ApplicationsApplications High transition frequency: f = 100 MHz (typ.) T Complementary to 2SA1225 Maxi ..
2SC2983 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Driver Stage Amplifier Applications2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2983 Power Amplifier
2SC2996 ,Transistor Silicon NPN Epitaxial Type (PCT process) FM/AM RF, MIX, Local, IF High Frequency Amplifier ApplicationsApplications High stability oscillation voltage on FM local oscillator Recommend FM/AM RF, ..
2SC2999 ,NPN Epitaxial Planar Silicon Transistor HF Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3000 ,NPN Epitaxial Planar Silicon Transistor HF Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3001 , NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
2SJ400 ,P-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions · Low ON resistance.unit:mm · Ultrahigh-speed switching.2093A · 4V driv ..
2SJ407 ,Field Effect Transistor Silicon P Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive Applications
2SJ407 ,Field Effect Transistor Silicon P Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive Applications
2SJ413 ,P-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SJ413 ,P-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions · Low ON resistance.unit:mm · Ultrahigh-speed switching.2076B · Low-vol ..
2SJ416 ,Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25°C unitDrain-to-Source Voltage VDSS - 30 VGate-to-Source Voltage ..
2SC2983
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Driver Stage Amplifier Applications
2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2983 Power Amplifier Applications
Driver Stage Amplifier Applications High transition frequency: fT = 100 MHz (typ.) Complementary to 2SA1225
Maximum Ratings (Ta = 25°C) Unit: mm
Weight: 0.36 g (typ.)
Weight: 0.36 g (typ.)