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2SC2982
Transistor Silicon NPN Epitaxial Type (PCT process) Storobo Flash Applications Medium Power Amplifier Applications
2SC2982 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2982 Storobo Flash Applications
Medium Power Amplifier Applications High DC current gain and excellent linearity
: hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A)
: hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A) Low saturation voltage
: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA) Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1314
Maximum Ratings (Ta = 25°C) VCES 30
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Note 2: 2SC2982 mounted on ceramic substrate (250 mm2 × 0.8 t)
Unit: mm
Weight: 0.05 g (typ.)
