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2SC2982 from TOSHIBA

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2SC2982

Manufacturer: TOSHIBA

Transistor Silicon NPN Epitaxial Type (PCT process) Storobo Flash Applications Medium Power Amplifier Applications

Partnumber Manufacturer Quantity Availability
2SC2982 TOSHIBA 30000 In Stock

Description and Introduction

Transistor Silicon NPN Epitaxial Type (PCT process) Storobo Flash Applications Medium Power Amplifier Applications The 2SC2982 is a high-frequency, high-speed switching transistor manufactured by Toshiba. It is an NPN silicon epitaxial planar type transistor designed for use in RF amplifiers and oscillators. Key specifications include:

- **Collector-Base Voltage (VCBO):** 30V
- **Collector-Emitter Voltage (VCEO):** 15V
- **Emitter-Base Voltage (VEBO):** 3V
- **Collector Current (IC):** 50mA
- **Total Power Dissipation (PT):** 300mW
- **Transition Frequency (fT):** 5.5GHz
- **Noise Figure (NF):** 1.5dB (typical at 1GHz)
- **Gain (hFE):** 20 to 200

The transistor is housed in a small surface-mount package (SOT-23) and is suitable for applications in VHF/UHF bands, such as in mobile communication devices and other high-frequency circuits.

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