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2SC2882TOSN/a19644avaiTransistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Voltage Amplifier Applications


2SC2882 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Voltage Amplifier ApplicationsApplications  Suitable for driver of 30 to 35 watts audio amplifier  Small flat package  P ..
2SC2883 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONSApplications Unit: mm  Suitable for output stage of 3 watts amplifier  Small flat package  ..
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2SJ355-T1 ,P-channel MOS FET (-30V, +-2A)DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ355P-CHANNEL MOS FETFOR HIGH SWITCHINGThe 2SJ355 is ..
2SJ355-T1 ,P-channel MOS FET (-30V, +-2A)DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ355P-CHANNEL MOS FETFOR HIGH SWITCHINGThe 2SJ355 is ..
2SJ356 ,P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHINGDATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ356P-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2SJ ..
2SJ356-T2 ,P-channel MOSFETDATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ356P-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2SJ ..


2SC2882
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Voltage Amplifier Applications
2SC2882 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2882

Power Amplifier Applications
Voltage Amplifier Applications Suitable for driver of 30 to 35 watts audio amplifier Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1202
Maximum Ratings (Ta = 25°C)

Note 1: Mounted on ceramic substrate (250 mm2 × 0.8 t)
Unit: mm
Weight: 0.05 g (typ.)
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