2SC2878 ,Transistor Silicon NPN Epitaxial Type For Muting and Switching Applications2SC2878 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC2878 For Muting and Switching
2SC2878 ,Transistor Silicon NPN Epitaxial Type For Muting and Switching ApplicationsApplications Unit: mm High emitter-base voltage: V = 25 V (min) EBO High reverse h : Reverse ..
2SC2878A , For Muting and Switching Applications
2SC2878-A , For Muting and Switching Applications
2SC2878-A , For Muting and Switching Applications
2SC2878-B , For Muting and Switching Applications
2SJ327-Z-E1 ,P-channel enhancement typeELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC SYMBOL m- MAX. UNIT TEST CONDITIONS
Drai ..
2SJ327-Z-E1 ,P-channel enhancement typeapplications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C)
Drain to Source Voltage VDSS --60 V
Ga ..
2SJ327-Z-E2 ,P-channel enhancement typeFEATURES
q Low On-state Resistance
RDS(on) = 0.13 n TYP. (VGS = -10 V, ID = --2 A)
RDS(on) = 0.2 ..
2SJ328 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USENEC ZSJ328, ZSJ328-Z
2SJ328-Z ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC SYMBOL
.
UNIT TEST CONDITIONS
v
..
2SJ328-Z-E1 ,P-channel enhancement typeELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC SYMBOL
.
UNIT TEST CONDITIONS
v
..
2SC2878
Transistor Silicon NPN Epitaxial Type For Muting and Switching Applications
2SC2878 TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC2878 For Muting and Switching Applications High emitter-base voltage: VEBO = 25 V (min) High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA) Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C)
Duty cycle� 2%
Note: hFE classification A: 200~700, B: 350~1200
Unit: mm
Weight: 0.21 g (typ.)
