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2SC2873N/a2avaiTransistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications


2SC2873 ,Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsApplications Unit: mmPower Switching
2SC2873-O , NPN Silicon Epitaxial Transistors
2SC2878 ,Transistor Silicon NPN Epitaxial Type For Muting and Switching Applications2SC2878 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC2878 For Muting and Switching
2SC2878 ,Transistor Silicon NPN Epitaxial Type For Muting and Switching ApplicationsApplications Unit: mm  High emitter-base voltage: V = 25 V (min) EBO High reverse h : Reverse ..
2SC2878A , For Muting and Switching Applications
2SC2878-A , For Muting and Switching Applications
2SJ325 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS fr, 'xi its TI l TEST CONDITIONS . VGS = ~10 V, ID = -2.0 A Ws = -4 ..
2SJ325-Z-E1 ,P-channel enhancement typeFEATURES C....; q Low On-state Resistance RDS(on) Tr-' 83' mn TYP. (VGs = -10 V, ID = -2 A) RD ..
2SJ325-Z-E2 ,P-channel enhancement typeFEATURES C....; q Low On-state Resistance RDS(on) Tr-' 83' mn TYP. (VGs = -10 V, ID = -2 A) RD ..
2SJ325-Z-T2 ,P-channel enhancement typeapplications. ABSOLUTE MAXIMUM RATINGS (Ta IL".' 25 °C) Drain to Source Voltage Voss V -30 V ..
2SJ326 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (Ta = 25 °C). " CHARACTERISTIC Drain to Source On-state Resistance ..
2SJ326-Z ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEapplications. ABSOLUTE MAXIMUM RATINGS (Ta '.rr. 25 °C) Drain to Source Voltage Voss ~60 V G ..


2SC2873
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications
2SC2873 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SC2873

Power Amplifier Applications
Power Switching Applications Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High speed switching time: tstg = 1.0 µs (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1213
Maximum Ratings (Ta = 25°C)

PC
Note 1: Mounted on ceramic substrate (250 mm2 × 0.8 t)
Unit: mm
Weight: 0.05 g (typ.)
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