2SC2824 ,SILICON NPN EPITAXIAL TYPE(PCT PROCESS)TOSHIBA tIyTSCRETE/0PT()1ft097250 TOSHIBA (D I SCRETE/OPTO)SILICON NPN EPITAXIALTYPE (PCT PROCESS)1 ..
2SC2833 ,Si NPN triple diffused. High speed switching.Absolute Maximum Ratings (Ta=25°C)T'"-'-Unit 1 mmHe; . 15.5max. 4.7-H 13 5 ' . max.I . max.3. l11.0 ..
2SC2845 ,SILICON NPN EPITAXIAL PLANARPANASONIC INl)L/ELEKCiHiihI+ 7iilC I) IEEIBEBSLI unmeaa aI-#57929pI,"Si-ln2SC28452$C2845' U a V NPN ..
2SC2851 ,Transistors (Selection Guide by Applications and Functions)Wuan-eDem.l Transistors (Selection Guide by
2SC2856 , Silicon NPN Epitaxial
2SC2857 ,NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SJ312 ,Field Effect Transistor Silicon P Channel MOS Type (L2-pi-MOSIV) DC .DC Converter, Relay Drive and Motor Drive Applications
2SJ315 ,Field Effect Transistor Silicon P Channel MOS Type (L2-pi-MOSIV) DC-DC Converter
2SJ316 ,Very High-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25°CDrain to Source VoltageGate to Source VoltageDrain Current(DC) ..
2SJ317NYTL-E , Silicon P Channel MOS FET
2SJ324 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (Ta = 25 °C)
PA
Gate to Source Leakage Current less i10 VGS = T16 ..
2SJ324-Z-E1 ,P-channel enhancement typeELECTRICAL CHARACTERISTICS (Ta = 25 °C)
PA
Gate to Source Leakage Current less i10 VGS = T16 ..
2SC2824
SILICON NPN EPITAXIAL TYPE(PCT PROCESS)
TOSHIBA tIyISCRETE/0PT01 Sk, os:lrnonvsn 00071205 E Il
3097250 TOSHIBA (DISCRETE/OPTO) 56C 07606 D ru. Ber-oy
SI LICON NPN EPITAXIAL TYPE (PCT PROCESS) 2 SC 2 8 2 4 . .
Unit in mm
AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. T.9MAX.
"---1 gf ,
o 3.11015
FEATURES: f 41-14" '
o - --', I
. Complementary to 2Sh1184, 5, / t,'rif4_' , I
. Suitable for driver of 60 to 80 watts , 3.
audio amplifier. ,' 'i)
. High breakdown voltage. if 4
MAXIMUM RATINGS (Ta.=25°C) 32‘
CHARACTERISTIC . SYMBOL RATING UNIT n .._L
(hy11eator.-Base Voltage Vcno 120 v 'cs'=='ii'-ttqti-, 'ii'
Collector-Emi) Voltage VCEO 120 v , "lr-Cl',),'!,
- V 1. EMITTER
Emitter Base Voltage VEBO 5 2. COLLECTOR (HEAT SINK)
Collector Current Ic 1 A s. BASE
Base Current IB 100 mh JEDEC TO-IM
Collector Power Ta=25°C PC 1 ll EIAJ -
Dissipation Tc=25°C 15 TOSHIBA 2-8FIA
Junction Temperature T3 150 oc Mounting Kit No. M3460
W i ht t 0.72
Storage Temperature Range Tstg -55-150 oc a g g
ELECTRICAL CHARACTERISTICS (ia=250C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=120V, IE=0 - - 100 nit
Emitter Cut-off Current IEBO VEB=5V, IC=O - - 100 nh
Co0etsiror-Emitttrv
Breakdown Voltage V(BR)CEO 1tp=10mh, IB=0 120 - - ll
Emitter-Base If I =ImA I .0 5 - - Y
Breakdown Voltage (BR)EBO E= , c=
DC current: Gain 'It, vCE=5v, IC=100mA 80 - 24o
ctnuctisranittez, . .
Saturation Voltage Irausat) Ic-c-ooo", 13-5mm - 0.30 1.0 y
Base-Emitter~Voltage - . VBE VcE=5V,. Ic=SOOmA - 0.78 1.0 ll
Transition Frgquency fr., VCE=5V, Ic=100mA - 120 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 15 - pF
Note: hFE Classification O:80~160 Yr120-240 .
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This Material Copyrighted By Its Respective Manufacturer
Turs-u-sr-c-ir-fire-irc-Yoon SI: oiclil'uvri'iesn 000751]? q lil
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90972 50 TOSH I BA t D I SCRETE IOPTO) -'-'---'"5""irtr'trrtr0t--rrcri. 3§;07
zsc2824 _
.s. t-
Ic - VCE
COMMON EMITTER
To - 25 'C
hFE - lo
COMMON EMITTER
Vos = 5 V
Te = toiyt".
oancTOR CURRENT :3 (mA)
CURRENT GAIN hFE
o 2 l tt a 10 Pd 5 5 10 30 50 100 300 500 1000
COLLECTOR EMI'I‘TI‘IR VOLTAGE Van (v) COLLECTOR CURRENT 1;; (mm
Tc - VBE
VCE(Bat) - Ic
COMMON BM TTTER
Irmg=xtiir
SATURATION VOLTAGE vows“) (v-
COMMON EMITTER
Te. / TB '= 10
COLLECTOR CURRENT IL: (mA)
ii Tc=1ooc
G 5 10 30 50 100 300 500 moo 0 02 tll ati at? ID
COLLECTOR CURRENT IC (mA) BM0l--EMiTTWt VOLTAGE VBE (v)
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This Material Copyrighted By Its Respective Manufacturer
TOSHIBA 4:ori:tyu:TEvoPTof SE DEIlHUH?ESU DDD?EDB i, lil,
9097250 TOSHIBA tDiSCRETE/OPTO) "55C ‘07608 07135757"
© Tc=Ta
INFINITE HEAT SINK
© N0 HEAT SINK
COLLECTOR POWER DISSIPATION Pc (W)
o a, IO 6O 80 100 120 140 160
AMBIENT TEMPERATURE Ta CC)
SAFE OPERATING AREA
...Y SINGLE NoNRBPBTTTTVg1
PULSE To - 25'C
10 MAX. (PULSED)
To MAX.(OON1‘INUOUS)
COLLECTOR CURRENT Tc (mA)
canvas MUST BE 'DERATED
30 LINEARLY wrm momma
IN TEMPERATURE
G 5 10 GO 50 100 Mo
t90LLW9ToR--EMTTTBR VOLTAGE VGE oo
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This Material Copyrighted By Its Respective Manufacturer
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