2SC2814 ,NPN Epitaxial Planar Silicon Transistor High-Friquency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC2824 ,SILICON NPN EPITAXIAL TYPE(PCT PROCESS)TOSHIBA tIyTSCRETE/0PT()1ft097250 TOSHIBA (D I SCRETE/OPTO)SILICON NPN EPITAXIALTYPE (PCT PROCESS)1 ..
2SC2833 ,Si NPN triple diffused. High speed switching.Absolute Maximum Ratings (Ta=25°C)T'"-'-Unit 1 mmHe; . 15.5max. 4.7-H 13 5 ' . max.I . max.3. l11.0 ..
2SC2845 ,SILICON NPN EPITAXIAL PLANARPANASONIC INl)L/ELEKCiHiihI+ 7iilC I) IEEIBEBSLI unmeaa aI-#57929pI,"Si-ln2SC28452$C2845' U a V NPN ..
2SC2851 ,Transistors (Selection Guide by Applications and Functions)Wuan-eDem.l Transistors (Selection Guide by
2SC2856 , Silicon NPN Epitaxial
2SJ302 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
2SJ302. ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
2SJ302Z ,High-speed switching P-ch power MOSFET 60V/16A
2SJ303 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (Ta = 25 "C)
CHARACTERISTIC MAX.
100
UNIT
n
SYMBOL TEST CON ..
2SJ303. ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEapplications.
' 2. Drain
ABSOLUTE MAXIMUM RATINGS (Ta ''l'llt 25 °C) 3. Source
Drain to Source ..
2SJ306 ,P-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions · Low ON resistance.unit:mm · Ultrahigh-speed switching.2063A · Low-vol ..
2SC2814
