2SC2780 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDFEATURES .
PAtii,Kt,ei5,,ee,eitli',eNs 0 World Standard Miniature Package
I
I Sli :SOT--89
. 4. ..
2SC2780-T1 ,Silicon transistorFEATURES .
PAtii,Kt,ei5,,ee,eitli',eNs 0 World Standard Miniature Package
I
I Sli :SOT--89
. 4. ..
2SC2784 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °c)
SYMBOL
CHARACTERISTIC TYP. MAX. UNIT
DC Current Ga ..
2SC2785 ,NPN SILICON TRANSISTORFEATURES . High Voltage VCEO : 50 v MIN. (0.1-55%., (0,8326%qu
0 Excellent hFE Linearity : 0.92 TY ..
2SC2786 ,NPN SILICON TRANSISTORFEATURES q High gain bandwidth product (fT = 600 MHz TYP.) io.yistlili., (053.5%,
. Small output c ..
2SC2786 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °c)
SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITIONS
..
2SJ245 , SILICON P-CHANNEL MOS FET
2SJ245 , SILICON P-CHANNEL MOS FET
2SJ245 , SILICON P-CHANNEL MOS FET
2SJ245 , SILICON P-CHANNEL MOS FET
2SJ246 , SILICON P-CHANNEL MOS FET
2SJ246 , SILICON P-CHANNEL MOS FET
2SC2780
