2SC2778 ,Small-signal deviceFeatures3• Optimum for RF amplification, oscillation, mixing, and IF ofFM/AM radios• Mini type pack ..
2SC2778 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca10˚Parameter Symbol Rating UnitCollector-base voltage (Emitter o ..
2SC2778 ,Small-signal deviceTransistors2SC2778Silicon NPN epitaxial planar typeFor high-frequency amplification Unit: mm+0.100. ..
2SC2780 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDFEATURES .
PAtii,Kt,ei5,,ee,eitli',eNs 0 World Standard Miniature Package
I
I Sli :SOT--89
. 4. ..
2SC2780-T1 ,Silicon transistorFEATURES .
PAtii,Kt,ei5,,ee,eitli',eNs 0 World Standard Miniature Package
I
I Sli :SOT--89
. 4. ..
2SC2784 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °c)
SYMBOL
CHARACTERISTIC TYP. MAX. UNIT
DC Current Ga ..
2SJ244 , Silicon P-Channel MOS FET
2SJ244 , Silicon P-Channel MOS FET
2SJ244 , Silicon P-Channel MOS FET
2SJ245 , SILICON P-CHANNEL MOS FET
2SJ245 , SILICON P-CHANNEL MOS FET
2SJ245 , SILICON P-CHANNEL MOS FET
2SC2778
