2SC2753 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Application2SC2753 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2753 VHF~UHF Band Low Noise Amp ..
2SC2757 , isc Silicon NPN RF Transistor
2SC2767 ,Conductor Products, Inc. - BIPOLAR TRANSISSTORS RATINGS AND SPECIFICATIONS
2SC2767 ,Conductor Products, Inc. - BIPOLAR TRANSISSTORS RATINGS AND SPECIFICATIONS
2SC2768 ,TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHINGApplications
_ _ 2.54 ai-U 7
.A(/ryrrtAci-e Switching regulators mam
"ift'AWMtt, Ultrasonic ge ..
2SC2776 , Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V
2SJ210-T1B ,P-channel MOS FETELECTRICAL CHARACTERISTICS (Ta = 25 oC)
CHARACTERISTIC SYMBOL . . . CONDITIONS
Drain Cut-off ..
2SJ210-T2B ,P-channel MOS FETapplications.
N e Gate(G)
Source(S)
(Diode in the figure is the parasitic diode.)
ABSOLUTE ..
2SJ211 ,P-CHANNEL MOS FET FOR SWITCHINGMOS 'iii''"'",''')"';'",']''"';:":""') EFFECT TRANSISTOR
2Sd21 1
P-CHANNEL MOS FET
FOR SWITC ..
2SJ211-T1B ,P-channel MOS FETMOS 'iii''"'",''')"';'",']''"';:":""') EFFECT TRANSISTOR
2Sd21 1
P-CHANNEL MOS FET
FOR SWITC ..
2SJ212 ,P-CHANNEL MOS FET FOR SWITCHINGFEATURES
0 Directly driven by ICs having a 5 V power supply.
0 Has low on-state resistance
RDS ..
2SJ212 ,P-CHANNEL MOS FET FOR SWITCHINGapplications.
(Diode in the figure is the parasitic diode.)
ABSOLUTE MAXIMUM RATINGS (Ta = 25 " ..
2SC2753
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Application
2SC2753 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC2753 VHF~UHF Band Low Noise Amplifier Application Low noise figure, high gain NF = 1.5dB, |S21e|2 = 16dB (f = 500 MHz) NF = 1.7dB, |S21e|2 = 10.5dB (f = 1 GHz)
Maximum Ratings (Ta ��� � 25°C)
Microwave Characteristics (Ta ��� � 25°C) VCE � 10 V, IC � 5 mA, f � 1 GHz
Electrical Characteristics (Ta ��� � 25°C)
Note: Cre is measured by 3 terminal method with capacitance bridge.
Unit: mm
Weight: 0.21 g (typ.)
