2SC2714 ,Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, MIX,IF Amplifier ApplicationsApplications Unit: mmFM, RF, MIX,IF Amplifier
2SC2714-O , High Frequency Amplifier Applications
2SC2714-O , High Frequency Amplifier Applications
2SC2715 ,Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier ApplicationsApplications Unit: mm High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz) Recommended for FM I ..
2SC2715 ,Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2715 High Frequen ..
2SC2721 ,Silicon transistorDATA SHEETSILICON TRANSISTOR2SC2721NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-FREQUENCY AMPLIF ..
2SJ175 , Silicon P-Channel MOS FET
2SJ175 , Silicon P-Channel MOS FET
2SJ178 ,P-CHANNEL MOS FET FOR HIGH SPEED SWITCHINGFEATURES
. Low ON-state resistance
RDSM = 1.5 n MAX. at VGS = --4 v, ID 'LT: -0.5 A
RDSM = 1 ..
2SJ179 ,P-CHANNEL MOS FET FOR HIGH SPEED SWITCHINGFEATURES
q Directly driven by le having a 5 V power supply.
0 Has low on-state resistance
RDS( ..
2SJ185 ,P-CHANNEL MOS FET FOR HIGH SPEED SWITCHINGapplications.
1.1 to 1.4
1. Source
2. Gate
3. Drain
MARK :H12
Source(S)
(Diode in ..
2SJ187 ,Very High-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta=25°C unitDrain to Source Voltage Vnss - 30 VGate to Source Voltage K ..
2SC2714
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, MIX,IF Amplifier Applications
2SC2714 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
2SC2714 High Frequency Amplifier Applications
FM, RF, MIX,IF Amplifier Applications Small reverse transfer capacitance: Cre = 0.7 pF (typ.) Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C) Gpe
Figure 1
Note: hFE classification R: 40~80, O: 70~140, Y: 100~200
Unit: mm
Weight: 0.012 g (typ.)