2SC2713 ,Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier ApplicationsApplications Unit: mm High voltage: V = 120 V CEO Excellent h linearity: h (I = 0.1 mA)/h (I ..
2SC2713-GR , Audio Frequency General Purpose Amplifier Applications
2SC2714 ,Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, MIX,IF Amplifier ApplicationsApplications Unit: mmFM, RF, MIX,IF Amplifier
2SC2714-O , High Frequency Amplifier Applications
2SC2714-O , High Frequency Amplifier Applications
2SC2715 ,Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier ApplicationsApplications Unit: mm High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz) Recommended for FM I ..
2SJ172 , Silicon P-Channel MOS FET
2SJ175 , Silicon P-Channel MOS FET
2SJ175 , Silicon P-Channel MOS FET
2SJ175 , Silicon P-Channel MOS FET
2SJ175 , Silicon P-Channel MOS FET
2SJ178 ,P-CHANNEL MOS FET FOR HIGH SPEED SWITCHINGFEATURES
. Low ON-state resistance
RDSM = 1.5 n MAX. at VGS = --4 v, ID 'LT: -0.5 A
RDSM = 1 ..
2SC2713
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications
2SC2713 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2713 Audio Frequency General Purpose Amplifier Applications High voltage: VCEO = 120 V Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) High hFE: hFE = 200~700 Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SA1163 Small package
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C)
Note: hFE classification GR (G): 200~400, BL (L): 350~700
Marking Unit: mm
Weight: 0.012 g (typ.)
