2SC2710 ,Transistor Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier ApplicationsApplications Unit: mm High DC current gain: h = 100~320 FE (1) Complementary to 2SA1150 Max ..
2SC2712 ,Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier ApplicationsApplications Unit: mm High voltage and high current: V = 50 V, I = 150 mA (max) CEO C Excell ..
2SC2712GR , Silicon NPN Transistors
2SC2712GR , Silicon NPN Transistors
2SC2712-GR , NPN Plastic-Encapsulate Transistors
2SC2712-GR , NPN Plastic-Encapsulate Transistors
2SJ130 , Silicon P-Channel MOS FET
2SJ130STL-E , Silicon P Channel MOS FET
2SJ132 ,MOS electric field effect power transistorFEATURES PACKAGE DRAWING (UNIT: mm)• Gate drive available at logic level (VGS = −4 V) High curr ..
2SJ132. ,MOS electric field effect power transistorFEATURES PACKAGE DRAWING (UNIT: mm)• Gate drive available at logic level (VGS = −4 V) High curr ..
2SJ132.. ,MOS electric field effect power transistorFEATURES PACKAGE DRAWING (UNIT: mm)• Gate drive available at logic level (VGS = −4 V) High curr ..
2SJ132-Z ,MOS electric field effect power transistorDATA SHEETMOS FIELD EFFECT POWER TRANSISTORS2SJ132, 2SJ132-ZP-CHANNEL POWER MOS FETFOR SWIT ..
2SC2710
Transistor Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier Applications
2SC2710 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2710 For Audio Amplifier Applications High DC current gain: hFE (1) = 100~320 Complementary to 2SA1150
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C)
hFE (1)
(Note)
Note: hFE (1) classification O: 100~200, Y: 160~320
Unit: mm
Weight: 0.13 g (typ.)
