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2SC2669N/a28avaiTransistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications


2SC2669 ,Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier ApplicationsApplications Unit: mm  High power gain: G = 30dB (typ.) (f = 10.7 MHz) pe Recommended for FM ..
2SC2671 ,Silicon NPN epitaxial planer type(For UHF band low-noise amplification)Absolute Maximum Ratings (Ta=25˚C)n+0.2 +0.2Parameter Symbol Ratings Unit0.45 –0.1 0.45 –0.1Collec ..
2SC2673 , 2SC2673
2SC2682 ,NPN SILICON POWER TRANSISTOR
2SC2688 ,NPN Silicon TransistorFEATURES The 2SC2688 is designed for use in Color TV chroma output circuits. . High Electros ..
2SC2690 ,Use in audio and radio Frequency power amplifiers.ELECTRICAL CHARACTERISTICS (Ta = 25 ''C) CHARACTERISTIC ‘MIN. TYP. MAX. PACKAGE DIMENSIONS ..
2SJ106 ,Field Effect Transistor Silicon P Channel Junction Type Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications
2SJ106 ,Field Effect Transistor Silicon P Channel Junction Type Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications
2SJ108 ,Field Effect Transistor Silicon P Channel Junction Type Low Noise Audio Amplifier Applications
2SJ108 ,Field Effect Transistor Silicon P Channel Junction Type Low Noise Audio Amplifier Applications
2SJ109 ,P CAHNNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER/ DIFFERENTIAL AMPLIFIER APPLICATIONS)
2SJ109 ,P CAHNNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER/ DIFFERENTIAL AMPLIFIER APPLICATIONS)


2SC2669
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications
2SC2669 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
2SC2669

High Frequency Amplifier Applications High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) Recommended for FM IF, OSC stage and AM CONV, IF stage.
Maximum Ratings (Ta �
�� � 25°C)
Electrical Characteristics (Ta �
�� � 25°C) Gpe VCC � 6 V, IE � �1 mA, f � 10.7 MHz
(Figure 1)
Note: hFE classification R: 40~80, O: 70~140, Y: 120~240
Unit: mm
Weight: 0.13 g (typ.)
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