2SC2655 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsAPPLICATIONS Unit in mmPOWER SWITCHING
2SC2669 ,Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier ApplicationsApplications Unit: mm High power gain: G = 30dB (typ.) (f = 10.7 MHz) pe Recommended for FM ..
2SC2671 ,Silicon NPN epitaxial planer type(For UHF band low-noise amplification)Absolute Maximum Ratings (Ta=25˚C)n+0.2 +0.2Parameter Symbol Ratings Unit0.45 –0.1 0.45 –0.1Collec ..
2SC2673 , 2SC2673
2SC2682 ,NPN SILICON POWER TRANSISTOR
2SC2688 ,NPN Silicon TransistorFEATURES
The 2SC2688 is designed for use in Color TV chroma output
circuits.
. High Electros ..
2SJ0536 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max UnitDrain current I V ..
2SJ0536 ,Small-signal deviceapplications intended.(4) The products and product specifications described in this material are su ..
2SJ106 ,Field Effect Transistor Silicon P Channel Junction Type Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications
2SJ106 ,Field Effect Transistor Silicon P Channel Junction Type Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications
2SJ108 ,Field Effect Transistor Silicon P Channel Junction Type Low Noise Audio Amplifier Applications
2SJ108 ,Field Effect Transistor Silicon P Channel Junction Type Low Noise Audio Amplifier Applications
2SC2655
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications
TOSHIBA 2SC2655
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
2SC2655
POWER AMPLIFIER APPLICATIONS Unit in mm
POWER SWITCHING APPLICATIONS 5.1MAX.
0 Low Saturation Voltage g
: VCE (sat)=O-5V (Max.) (1C21A) 0,75MAX.
0 High Speed Switching Time : tstg=1.0,us (Typ.) 1.OMAX. , - .
0.8MAX, , ' c! x E
o Complementary to 2SA1020. _- é a
1 2 3 X.
2.54 ist
Ct" s-,','', yt'
1. EMITTER é
2. COLLECTOR
3. BASE
JEDEC T0-92MOD
JEITA -
TOSHIBA 2-5J1A
Weight : 0.36g (Typ.)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 2 A
Base Current IB 0.5 A
Collector Power Dissipation PC 900 mW
J unction Temperature Tj 150 "C
Storage Temperature Range Tstg -55--150 "C
1 2001-11-05
TOSHIBA 2SC2655
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TE ST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 50V, IE = 0 - - 1.0 PA
Emitter Cut-off Current IEBO VEB = 5V, IC = 0 - - 1.0 PA
Collector-Emitter Breakdown
Voltage V (BR) CEO IC - 10mA, IB - 0 50 - - V
hFE (1)
V = 2V I = . A 7 - 24
DC Current Gain (Note) CE ' C 0 5 0 0
hFE (2) VCE = 2V, IC = 1.5A 40 - -
Saturation Collector-Emitter VCE (sat) IC = IA, 1B = 0.05A - - 0.5 V
Voltage Base-Emitter VBE (sat) 1C = IA, IB = 0.05A - - 1.2
Transition Frequency fT VCE = 2V, IC = 0.5A - 100 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = o, f = IMHz - 30 - pF
Turn-on Time ton 20/1SIN- IB_l OUTPUT - 0.1 -
PUT - C3
Switching . I 1B2 H
Time Storage Time tstg B2 30V - 1.0 - gs
. I131: -IB2--0.05A,
Fall Time tf DUTY CYCLES 1% - 0.1 -
Note : hFE(1) Classification 0 : 70--140, Y : 120--240
2 2001-11-05
TOSHIBA
Ic (A)
COLLECTOR CURRENT
COLLECTOR-EMI’I‘I‘ER VOLTAGE
DC CURRENT GAIN hFE
IC - VCE
COMMON EMITTER
Ta = 25''C
2 l 6 8 10 12 14
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE - IC
COMMON EMITTER
Ta = 100°C
0.4 0.8 1.2 1.6 2.0 2.4
COLLECTOR CURRENT Ic (A)
hFE - IC
COMMON EMITTER
VCE = 2v
Ta = 100''C
0.03 0.1 0.3 1
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER VOLTAGE
COLLECTOREMITTER VOLTAGE
COLLECTOR-EMITTER SATURATION
VOLTAGE Vows“) (V)
2SC2655
VCE - IC
COMMON
EMITTER
Ta = 25°C
0.8 1.2 1.6 2.0 2.4
COLLECTOR CURRENT IC (A)
VCE - IC
EMITTER
Ta = - 55''C
0.8 1.2 1.6 2.0 2.4
COLLECTOR CURRENT IC (A)
VCE (sat) - IC
COMMON EMITTER
IC/IB=20
Ta = 1 00°C
0.1 0.3 1
COLLECTOR CURRENT IC (A)
TOSHIBA 2SC2655
VBE (sat) - IC IC - VBE
COMMON EMITTER I COMMON EMITTER
2?: ICIIB=20 S I VCE=2V
g Ca" S? 1.5
p 3 Ta-- -55''C H I
g g 1 p;
Mk E: Ta=100°C I 25 -55
E S 1 o
'ji/ii 0.5 © H
H. S 0.3 o
2 > M 0 5
m 3 . l / l
0.01 0.03 0.1 0.3 1 y
COLLECTOR CURRENT 10 (A) 00 0.4 0.8 1.2 1.6 2.0
BASE-EMITTER VOLTAGE VBE (V)
SAFE OPERATING AREA PC - Ta
5 I . I 1000
10 MAX. (PULSED) X l Ims)k.
, . p:
IC MAX. (CONTINUOUS) 's,. \A I o
, 10msyd. -- a
A N M g
s \ " \ l -
1 s100msMN l g
S? "N. A E A 600
N " let,
E 0.5 N II E 5
3:” 0.3 - DC OPERATION 15X l g o
ttd - = o \ N l " 400
Q Ta 25 C , td
0 N N, V o
ttt l l l I HI l N Is S
Fe 0.1 t, tl Ed
a X SINGLE \ I, 3 200
.2 NONREPETITIVE 's l 8
g 0.05 PULSE Ta=25°C N
0 0.03 CURVES MUST BE 0
DERATED LINEARLY WITH hc 0 40 80 120 160 200 240
INCREASE IN , ''
TEMPERATURE. VCEO MAX. AMBIENT TEMPERATURE Ta CC)
0.01 I I I [
0.2 0.5 1 3 10 30 100
COLLECTOR-EMITTER VOLTAGE VCE (V)
4 2001-11-05
TOSHIBA 2SC2655
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
5 2001-11-05
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