2SC2642 ,Trans GP BJT NPN 17V 2.8A 4-Pin 2-7A1AAPPLICATIONS Unit in mmOutput Power : P0=12W (Min.)(f-- 470MHz, VCC = 12.6V, Pi = 3W)MAXIMUM RATING ..
2SC2650 , isc Silicon NPN Power Transistor
2SC2654 ,Silicon transistorDATA SHEETSILICON POWER TRANSISTOR2SC2654NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY ..
2SC2655 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsAPPLICATIONS Unit in mmPOWER SWITCHING
2SC2669 ,Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier ApplicationsApplications Unit: mm High power gain: G = 30dB (typ.) (f = 10.7 MHz) pe Recommended for FM ..
2SC2671 ,Silicon NPN epitaxial planer type(For UHF band low-noise amplification)Absolute Maximum Ratings (Ta=25˚C)n+0.2 +0.2Parameter Symbol Ratings Unit0.45 –0.1 0.45 –0.1Collec ..
2SH20 , Silicon N-Channel IGBT
2SJ0536 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max UnitDrain current I V ..
2SJ0536 ,Small-signal deviceapplications intended.(4) The products and product specifications described in this material are su ..
2SJ106 ,Field Effect Transistor Silicon P Channel Junction Type Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications
2SJ106 ,Field Effect Transistor Silicon P Channel Junction Type Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications
2SJ108 ,Field Effect Transistor Silicon P Channel Junction Type Low Noise Audio Amplifier Applications
2SC2642
Trans GP BJT NPN 17V 2.8A 4-Pin 2-7A1A
TOSHIBA
2SC2 642
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2642
UHF BAND POWER AMPLIFIER APPLICATIONS
0 Output Power : P0=12W(Min.)
Unit in mm
(f=470MHz, Vcc=12.6V, Pi=3W) - m
2-RI.6 _,1, _ i; 33
2-R3 I Z".
l lie; 1
MAXIMUM RATINGS (Tc = 25°C) C, 16 .
u; c5 187:9.;_. ti
CHARACTERISTIC SYMBOL RATING UNIT E: i',, 7MAX. t,'r,1,,
Collector-Base Voltage VCBO 35 V N. , ' i
Collector-Emitter Voltage VCEO 17 V l J O
Emitter-Base Voltage VEBO 3.5 V 05 H
Collector Current IC 2.8 A 1. EMITTER
. . . 2. BASE
Collector Power Dissipation PC 30 W 3. EMITTER
J unetion Temperature Tj 175 "C 4. COLLECTOR
Storage Temperature Range Tstg -65--175 C JEDE C -
EIAJ -
TOSHIBA 2-7A1A
ELECTRICAL CHARACTERISTICS (Tc=25°C) Weight : 1.6g
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX UNIT
Collector Cut-off Current ICBO VCB=15V, IE=0 - - 1.5 mA
Collector-Base Breakdown Voltage V(BR) CBO Ic=2mA, IE=0 35 - - V
Collector-Emitter Breakdown Voltage V(BR) CEO IC=10mA, IB=0 17 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=0.2mA, 10:0 3.5 - - V
DC Current Gain hFE VCE=5V, IO: 1.5A * 10 - -
Collector Output Capacitance C b VCB=10VJE=0 - 28 40 pF
0 f=1MHz
Output Power Po (Fig.) 12 - - W
Power Gain Gp Vcc=12.6V, f = 470MHz 6 - - dB
Collector Efficiency " Pi=3W 60 - - %
. . . 1.2
Series Equivalent Input Impedance Zin VCC=12.6V, f: 470MHz - +j4 - n
Series Equivalent Output Impedance Zout Po 12W - +j0.5 - Q
* Pulse Test : Pulse Widths 100ps, Duty Cycles 3%
CAUTION
Beryllia Ceramics is used in this product. The dust or vapor can be dangerous to humans. Do not
break, cut, crush or dissolve chemically. Dispose of this product properly according to law. Do not
intermingle with normal industrial or domestic waste. 961001EAA2
TOSHIBA Semiconductor Reliability Handbook.
0 TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA
2SC2 642
Fig. Po TEST CIRCUIT
ZG--50fyf '
C1,C2,Cg, C4 .' ~20pF
C5,Ce : lOpF
C7 : 0.01 pF
Cg : 0.02/d?
C9 : IO/d?
L1, L2 .' 5X20X0.1mm COPPER PLATE
L3 .' 361 SILVER PLATED COPPER WIRE, 101D, 2T
RFC : 5230.5 ENAMEL COATED COPPER WIRE, 71D, 10T
F.B : FERRITE BEAD
Po, " - Pi
Vcc=12.6V /
f=470MHz //po G"
Ci 14 / te
a / fs?
E / ','i.'i.i
s / E:
W. [31
g 6 / 80 'j,)
..--- ----- -- 70 LE)
..--" vs g
2 60 U
o 2 4 6
INPUT POWER Pi (W)
CAUTION
RFC J i L3 C
C2 C5 C7
F.B J, r
ZL=5OQ
These are only typical curves and devices are not necessarily guaranteed at these curves.
961001 EAA2'
CORPORATION for any infringements of intellectual property or other rights o
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
o T e information contained herein is subject to change without notice.
O The information contained herein is presented only as a guide for the aglig,titgi",sd of our 'vigoiect,,si, No relspfonsibility is assurlned by 'f/e/el
t e t ir parties w ic may result rom its use. No icense is grante
1998-07-17 2/2
www.ic-phoenix.com
.
