2SC2641 ,TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)2SC2641TOSHIBA TRANSISTOR SILICON NPN EPlTAXIAL PLANAR T7QC7641'tiN...--UHF BAND POWER AMPLIFIER
2SC2641 ,TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)APPLICATIONS Unit in mmOutput Power : P0=6W(Min.)(f-- 470MHz, VCC = 12.6V, Pi = 1W)MAXIMUM RATINGS ..
2SC2642 ,Trans GP BJT NPN 17V 2.8A 4-Pin 2-7A1AAPPLICATIONS Unit in mmOutput Power : P0=12W (Min.)(f-- 470MHz, VCC = 12.6V, Pi = 3W)MAXIMUM RATING ..
2SC2650 , isc Silicon NPN Power Transistor
2SC2654 ,Silicon transistorDATA SHEETSILICON POWER TRANSISTOR2SC2654NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY ..
2SC2655 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsAPPLICATIONS Unit in mmPOWER SWITCHING
2SH14 , Silicon N-Channel IGBT
2SH20 , Silicon N-Channel IGBT
2SJ0536 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max UnitDrain current I V ..
2SJ0536 ,Small-signal deviceapplications intended.(4) The products and product specifications described in this material are su ..
2SJ106 ,Field Effect Transistor Silicon P Channel Junction Type Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications
2SJ106 ,Field Effect Transistor Silicon P Channel Junction Type Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications
2SC2641
TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)
TOSHIBA
2SC2641
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2641
UHF BAND POWER AMPLIFIER APPLICATIONS
Unit in mm
[3 3 l
0 Output Power : P0=6W(Min.)
(f=470MHz, Vcc=12.6V, Pi=1W) - m
2-RI.6 _,l, _ i; 33
2-R3 I 1
MAXIMUM RATINGS (TC=25°C) l 2 Bil l
CHARACTERISTIC SYMBOL RATING UNIT ales 2:
©, d 1
Collector-Base Voltage VCBO 35 V 'i?, l '7MAX. o,i,ij,.
Collector-Emir Voltage VCEO 17 V au'
Emitter-Base Voltage VEBO 3.5 V I V I
Collector Current IC 1.4 A -saascsss____) 3
Collector Power Dissipation PC 15 W l. EMITTER
J unction Temperature Tj 175 "C 2. BASE
o 3. EMITTER
Storage Temperature Range Tstg -65--175 C 4. COLLECTOR
JEDEC -
EIAJ -
TOSHIBA 2-7A1A
ELECTRICAL CHARACTERISTICS (Tc=25°C) Weight : 1.9g
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=15V, IE=0 - - 1 mA
Collector-Base Breakdown Voltage V(BR) CBO Ic=2mA, IE=0 35 - - V
Collector-Emir Breakdown Voltage V(BR) CEO Ic=10mA, IB=0 17 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=0.2mA, Ic=0 3.5 - - V
DC Current Gain hFE VCE=5V, IC-- IA * 10 - -
Collector Output Capacitance C b VCB=10V, IEZO - - 25 pF
o f = 1MHz
Output Power Po (Fig.) 6 - - W
Power Gain G, Vcc=12.6V, f = 470MHz 7.7 - - dB
Collector Efficiency " Pi=1W 6O - - %
. . 1.6
Series Equivalent Input Impedance Zin Vcc=12.6V, f: 470MHz - +j4.5 - n
Series Equivalent Output Impedance Zout Po=6W - f: - Q
* Pulse Test : Pulse Widths 100ps, Duty Cycles 3%
CAUTION
Beryllia Ceramics is used in this product. The dust or vapor can be dangerous to humans. Do not
break, cut, crush or dissolve chemically. Dispose of this product properly according to law. Do not
intermingle with normal industrial or domestic waste.
961001EAA2
TOSHIBA Semiconductor Reliability Handbook.
0 TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA 2SC2641
Fig. Po TEST CIRCUIT
Pi C1 L1 C4 Po
ZG--50nt " . "TC . . pf o
J C6 zL=5oQ
C1, C2, C3, C4 : --20pF
C5, C6 .' lOpF
C7 : 0.01PF
C8 : 0.02/di'
Cg .' 10PF
L1, L2 : 5X20X0.1mm COPPER PLATE
L3 : ¢1 SILVER PLATED COPPER WIRE, 101D, 2T
RFC : ¢0.5 ENAMEL COATED COPPER WIRE, 7ID, 10T
F.B .' FERRITE BEAD
Po, " - Pi
Vcc=12.6V // g
f=470MHz Po / V
fi 6 ,/// E
o? I/ 'i
E 4 /'''''' i'iiii)
Ct / 80 Z
:5 2 7c _.-- 70 t?
o r.---------- a
- ... 60 g
0 0.4 0.8 1.2 1.6
INPUT POWER Pi (W)
CAUTION
These are only typical curves and devices are not necessarily guaranteed at these curves.
961001 EAA2'
O The information contained herein is presented only as a guide for the apflications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights o the third parties which may result from its use. No license is granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
o T e information contained herein is subject to change without notice.
1998-07-17 2/2
www.ic-phoenix.com
.
