2SC2570 ,NPN SILICON HIGH FREQUNY TRANSISTORAPPLICATIONS
The NE021 series of NPN slllcon transistors provldes eco-
nomical solutions to wid ..
2SC2570 ,NPN SILICON HIGH FREQUNY TRANSISTORELECTRICAL SPECIFICATIONS (TA = 25°C) =' . ' 1 , .
1 PART NUMBER NE02100 ‘ NE02103 NE02112
‘ EI ..
2SC2570A ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTORDATA SHEETNPN SILICON TRANSISTOR2SC2570AHIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAX ..
2SC2579 , Silicon NPN Power Transistors
2SC2585 , NPN SILICON RF TRANSISTOR
2SC2590 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SD950 ,Si NPN triple diffused junction mesa . Line-operated horizontal deflection output.mu; J’hli. I _ . -PANASONIC 1:NsyL/s:Lsz4::iniyrr:; '?EC " EEIBEBSLI UDD‘lHELI 5hs5:5?yi':y7Sf .5“. ..
2SD951 ,Si NPN triple diffused junction mesa . Line-operated horizontal deflection output.Absolute Maximum Ratings (Ta=25 "C)Epitaxial Planar Darlingtonwith 2813895, 2SB895Amotor driver and ..
2SD959 ,SI NPN TRIPLE DIFFUSED JUNCTION MESAAbsolute Maximum Ratings (Ta=25 "C)Item Symbol Value Unit % i Eris."3 v , f . &- A'rtlj:T, M 1500 V ..
2SD965 ,Small-signal deviceTransistors2SD0965 (2SD965)Silicon NPN epitaxial planar typeFor low-frequency power amplificationUn ..
2SD965AL-R-AB3-R , LOW VOLTAGE HIGH CURRENT TRANSISTOR
2SD965-Q , Low collector-emitter saturation voltage VCE(sat) low-voltage power supply.
2SC2570-NE02135
