2SC2555 ,POWER TRANSISTORS(8.0A,400V,80W)ELECTRICAL CHARACTERISTICS (Ta =25°C) Weight : 4.6gCHARACTERISTIC SYMBOL TEST CONDITION UNITomector ..
2SC2562 , SILICON NPN EXPITAXIAL TYPE (PCT PROCESS)
2SC2562 , SILICON NPN EXPITAXIAL TYPE (PCT PROCESS)
2SC2562 , SILICON NPN EXPITAXIAL TYPE (PCT PROCESS)
2SC2570 ,NPN SILICON HIGH FREQUNY TRANSISTORAPPLICATIONS
The NE021 series of NPN slllcon transistors provldes eco-
nomical solutions to wid ..
2SC2570 ,NPN SILICON HIGH FREQUNY TRANSISTORELECTRICAL SPECIFICATIONS (TA = 25°C) =' . ' 1 , .
1 PART NUMBER NE02100 ‘ NE02103 NE02112
‘ EI ..
2SD907 , isc Silicon NPN Power Transistor
2SD917 ,Silicon NPN triple diffused planar transistor, 330V, 7AAbsolute Maximum Ratings (Ta=25°C) High Power TV Deflection _Item '” Nature: _ ICollector-Base Volt ..
2SD921 , High speed switching transistor
2SD923 , High speed switching transistor
2SD923 , High speed switching transistor
2SD950 ,Si NPN triple diffused junction mesa . Line-operated horizontal deflection output.mu; J’hli. I _ . -PANASONIC 1:NsyL/s:Lsz4::iniyrr:; '?EC " EEIBEBSLI UDD‘lHELI 5hs5:5?yi':y7Sf .5“. ..
2SC2555
POWER TRANSISTORS(8.0A,400V,80W)
TOSHIBA 2SC2555
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
2SC2555
SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING INDUSTRIAL APPLICATIONS
APPLICATIONS. Unit in mm
HIGH SPEED DC-DC CONVERTER APPLICATIONS. 15.9MAx. ¢3.2t0.2
0 Excellent Switching Times C;
.' tr=1.0ys (Max.), tf=1.0/xs (Max.) at IC=4A 7,T' g
0 High Collector Breakdown Voltage : VCEO=400V rs' m m
MAXIMUM RATINGS (Ta = 25°C) v,t,il
CHARACTERISTIC SYMBOL RATING UNIT -
5:45:02 5.45102
Collector-Base Voltage VCBO 500 V _ Cir; ti'
Collector-Emi) Voltage VCEO 400 V 'i' ll, , g
Emitter-Base Voltage VEBO 7 V l 31-51".“ '
Collector Current DC 1C 8 A
Pulse ICP 10 A
Base Current I 4 A l. BASE
B 2. COLLECTOR (HEAT SINK)
Collector Power Ta=25°C 2.5 3. EMITTER
. . . PC W
Dissipation Tc = 25°C 80 J EDEC -
Junction Temperature Ti 150 T EIAJ -
Storage Temperature Range Tstg -55--150 T
TOSHIBA 2-16B1A
ELECTRICAL CHARACTERISTICS (Ta =25°C) Weight : 4.6g
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=400V, IE=0 - - 100 pdk
Emitter Cut-off Current IEBO VEB=7V, 10:0 - - 1 mA
Collector-Base Breakdown
Voltage V (BR) CBO IC-- MA, IE=0 500 - - v
Collector-Emi; Breakdown
Vol tage V (BR) CEO IC = 10mA, IB = 0 400 - - V
DC Current Gain hFE (1) VCE =5V, IC = IA 15 - -
hFE (2) VCE = 5V, IC = 4A 10 - -
Saturation Collector-Emitter VCE (sat) IC =4A, IB = 0.8A - - 1.0 V
Voltage Base-Emitter VBE (sat) IC = 4A, IB = 0.8A - - 1.5
Rise Time tr 'les VCC 200V - - 1.0
S h 'B1Tla,
witc in .
Time g Storage Time tstg IB2 11}; OUT- - - 2.5 gs
INPUT - PUT
Fall Time tf 1131: -IB2--0.4A - - 1.0
DUTY CYCLES 1%
1 2001-05-24
TOSHIBA
SWITCHING TIME (/15)
DC CURRENT GAIN hFE
BASE-EMITTER SATURATION
VOLTAGE VBE (sat)
10 (A)
COLLECTOR CURRENT
SWITCHING CHARACTERISTICS
10/13: 10
IB1 = - IB2
PULSE WIDTH=20/zs
DUTY CYCLES 1%
Tc=25°C
'0 1 2 3 4 5 6
COLLECTOR CURRENT 10 (A)
hFE - IC
COMMON EMITTER
VCE = 5V
50 Tc = 100°C
0.03 0.1 0.3 1 3 10
COLLECTOR CURRENT IC (A)
VBE(sat) - IC
COMMON EMITTER
1C / IB = 5
0.1 0.3 1 3 10
COLLECTOR CURRENT 1C (A)
IC - VBE
COMMON EMITTER
VCE =5v
Tc = 100°C
0 0.4 0.8 1.2 1.6 2.0 2.4
BASE-EMITTER VOLTAGE VBE (V)
10 (A)
COLLECTOR CURRENT
VCE (sat) (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE
10 (A)
COLLECTOR CURRENT
0.05 INCREASE IN
2SC2555
IC - VCE
COMMON
EMITTER
Tc = 25°C
IB=20mA
0 4 a 12 16 20
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE(Sat) - IC
COMMON EMITTER
0.5 C/ B 5
0.05 25
0.03 0.1 0.3 1 3 10
COLLECTOR CURRENT IC (A)
SAF E OPERATING AREA
10 MAX. (PULSED) IT. 10psht.
10msy.t. ,us
l Imsyd.
X SINGLE NONREPETITIVE
PULSE Tc=25°C
0.1 CURVES MUST BE
DERATED LINEARLY WITH V MAX
TEMPERATURE.
3 10 30 100 300
COLLECTOR-EMITTER VOLTAGE VCE (V)
TOSHIBA 2SC2555
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-05-24
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