2SC2552 ,Silicon NPN Power Transistors TO-220C package2SC2552TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)SWITCHING REGULATOR AND HIG ..
2SC2552 ,Silicon NPN Power Transistors TO-220C packageAPPLICATIONS. I m Rh/WX msinz IExcellent Switching Times: tr=1.0,us (Max.) tf=1.0,us (Max.) at 10:0 ..
2SC2553 , Silicon NPN Power Transistors
2SC2555 ,POWER TRANSISTORS(8.0A,400V,80W)ELECTRICAL CHARACTERISTICS (Ta =25°C) Weight : 4.6gCHARACTERISTIC SYMBOL TEST CONDITION UNITomector ..
2SC2562 , SILICON NPN EXPITAXIAL TYPE (PCT PROCESS)
2SC2562 , SILICON NPN EXPITAXIAL TYPE (PCT PROCESS)
2SD907 , isc Silicon NPN Power Transistor
2SD917 ,Silicon NPN triple diffused planar transistor, 330V, 7AAbsolute Maximum Ratings (Ta=25°C) High Power TV Deflection _Item '” Nature: _ ICollector-Base Volt ..
2SD921 , High speed switching transistor
2SD923 , High speed switching transistor
2SD923 , High speed switching transistor
2SD950 ,Si NPN triple diffused junction mesa . Line-operated horizontal deflection output.mu; J’hli. I _ . -PANASONIC 1:NsyL/s:Lsz4::iniyrr:; '?EC " EEIBEBSLI UDD‘lHELI 5hs5:5?yi':y7Sf .5“. ..
2SC2552
Silicon NPN Power Transistors TO-220C package
TOSHIBA
2SC2552
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
2SC2552
SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING
INDUSTRIAL APPLICATIONS
APPLICATIONS. Unit in mm
HIGH SPEED DC-DC CONVERTER APPLICATIONS. 10.3NIAX. fl2-6-+-0c?
l bl L_ai se'
0 Excellent Switching Times ' :E: if
: tr=1.0ys (Max.) tf=1.0/xs (Max.) at Ic=0.8A ( E
0 High Collector Breakdown Voltage : VCE0=400V 2‘ I ,
U2, Le
MAXIMUM RATINGS (Ta = 25°C) m t E l
1.5MAX. _ [ m
CHARACTERISTIC SYMBOL RATING UNIT 0.76 l -
Collector-Base Voltage VCBO 500 V g
Collector-Emitter Voltage VCEO 400 V st'
Emitter-Base Voltage VEBO 7 V
Collector Current IC 2 A
Base Current IB 0.5 A l. BASE
Collector Power Ta=25°C P 1.5 W 2. COLLECTOR (HEAT SINK)
Dissipation Te = 25°C C 20 3. EMITTER
J unction Temperature Tj 150 "C JEDEC TO-220AB
Storage Temperature Range Tstg -55--150 T EIAJ SO46
TOSHIBA 2-10A1A
Weight : 1.9g
ELECTRICAL CHARACTERISTICS (Ta = 25°C) Mounting kit No. AC75
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=400V, IE=0 - - 100 PA
Emitter Cut-off Current IEBO VEB=7V, Ic=0 - - 1 mA
Collector-Base Breakdown
Voltage V (BR) CBO IC = 1mA, IE = 0 500 - - V
Collector-Emitter Breakdown - -
Voltage V (BR) CEO 10 - 10mA, IB - 0 400 - - v
DC Current Gain hFE (1) VCE =5V, IC =0.1A 20 - -
hFE (2) VCE = 5V, IC = IA 8 - -
Saturation Collector-Emitter VCE (sat) IC = IA, IB = 0.2A - - 1.0 V
Voltage Base-Emitter VBE (sat) IC = IA, 1B = 0.2 A - - 1.5
Turn-on Time tr 1B1 be,'' 'At, Itl OUTPUT - - 1.0
Switchin . 'ic-','-:"? (, C}
Time g Storage Time tstg 0 Tlie,',-, IB2 E - - 2.5 ,as
Fall Time tf 11,,TlRiy,181A, VCC=.200V - - 1.0
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibilit
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TO HIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
of the buyer, when utilizing
1997-09-01 1/2
TOSHIBA
2SC2552
SWITCHING TIME (/15)
DC CURRENT GAIN hFE
BASE-EMITTER SATURATION
VOLTAGE VBE (set)
10 (A)
COLLECTOR CURRENT
SWITCHING CHARACTERISTICS
IC/IB=10
IB HF -13 (2)
PULSE WIDTH=20/zs
DUTY CYCLES 1%
Tc=25°C
0.2 0.4 0.6 0.8 1.0 1.2 1.4
COLLECTOR CURRENT IC (A)
hFE - IC
Ta=100°C
COMMON
EMITTER
VCE=5V
0.01 0.03 0.1 0.3 1
COLLECTOR CURRENT IC (A)
VBE (sat) - IC
COMMON EMITTER
IC / IB = 5
1 Tc= -55'C
100 25
0.01 0.03 0.1 0.3 1
COLLECTOR CURRENT IC (A)
IC - VBE
COMMON EMITTER
1.6 VCE =5v
Te - 1 00°C
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION
VOLTAGE vowsau (V)
COLLECTOR CURRENT IC (A)
IC - VCE
COMMON EMITTER
Tc=25°C
2 4 6 8 10 12
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE (sat) - IC
COMMON EMITTER
IC/IB = 5
0.01 0.03 0.1 0.3 1
COLLECTOR CURRENT 10 (A)
SAFE OPERATING AREA
- I I i i i
5 -ic MAX. (PULSED) lk. l l _ l i
31 1M;£11i\)% ?lmsx 10/t)ii
C . . \ 100psyf-
(CONTINUOUS) N) N \)<
1 I (ll \ \
_ _ _ h
3msik. h, _ N
Ai',, k N ,
0.5 DC OPERATION N A \ \
0.3 Tc=25°C 's, \ l
I I INN N \
Pm"1C.C.L , )s, l l
300msy.e R' L \
I I i ERIE _ _
I I l tttst
X SINGLE RR,.
0.05 NONREPETITIVE 'iCQ
PULSE Tc=25°C N ,
0.03 CURVES MUST BE , A
DERATED LINEARLY
WITH INCREASE IN VCEo
0.01 TEMPERATURE. MAX.
. 3 10 30 100 300
C0LLECT0%EMITTER VOLTAGE VCE (V)
961001EAA2'
O The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights o the third games which may result from its use. No license is granted
by implication or otherwise under any intellectual property or other rights of TOSHIBA C
O The information contained herein is subject to change without notice.
RPORATION or others.
1997-09-01 2/2
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