2SC2458-L ,TRANSISTOR (AUDIO/ LOW NOISE AUDIO AMPLIFIER APPLICATIONS)APPLICATIONS4.2MAX.High Current Capability :IC = 150mA (Max.)ZMAXHigh DC Current Gain: hFE = 70--70 ..
2SC2462 , Low frequency amplifier. Collector-base voltage VCBO 50 V
2SC2462 , Low frequency amplifier. Collector-base voltage VCBO 50 V
2SC2462 , Low frequency amplifier. Collector-base voltage VCBO 50 V
2SC2462 , Low frequency amplifier. Collector-base voltage VCBO 50 V
2SC2463 , Low frequency amplifier. Collector-base voltage VCBO 55 V
2SD871 , POWER TRANSISTORS(6A,1500V,50W)
2SD874 ,Small-signal deviceapplications (such as for airplanes, aerospace, automobiles, traffic control equipment,combustion e ..
2SD874A ,Small-signal deviceTransistors2SD0874, 2SD0874A (2SD874, 2SD874A)Silicon NPN epitaxial planar typeFor low-frequency po ..
2SD874-Q , NPN Silicon Power Transistors
2SD874-S , NPN Silicon Power Transistors
2SD875 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC2458-L
TRANSISTOR (AUDIO/ LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
TOSHIBA
TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE (PCT PROCESS)
2Sc2458(L)
AUDIO AMPLIFIER APPLICATIONS
2SC2458(L)
Unit in mm
LOW NOISE AUDIO AMPLIFIER APPLICATIONS
4.2MAX,
. . . i l i é
q High Current Capability .' IC=150mA(Max.) ', i ( g.
I I rn'
o High DC Current Gain : hFE=70--700 ‘1 l l' w L)
o Excellent hFE Linearity 0 55MAX , F..-..--.-- F g
: hFE (10 = 0.1mA) / hFE (IC = 2mA) = 0.95 (Typ.) g F,
o Low Noise : NF (2)=0.2dB (Typ.), 3dB (Max.) 0.4 F
0 Complementary to 2SA1048(C). ' g', 51
w 1.27,1.27 ci .4
0 Small Package. ar' -lr'2'-'e.l,'til ye
- - - <
1 2 3 % ‘ED.
MAXIMUM RATINGS (Ta = 25°C) L; _____N_
CHARACTERISTIC SYMBOL RATING UNIT 1 EMITTER
Collector-Base Voltage VCBO 50 V g ggélgECTOR
Collector-Emi; Voltage VCEO 50 V .
Emitter-Base Voltage VEBO 5 V JEDEC -
Collector Current IC 150 mA EIAJ -
Base Current IB 50 mA TOSHIBA 2-4E1A
Collector Power Dissipation PC 200 mW Weight : 0.13g
Junction Temperature Tj 125 ''C
Storage Temperature Range Tstg -55--125 ''C
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 0.1 pA
Emitter Cut-off Current IEBO VEB=5V, 10:0 - - 0.1 PA
DC Current Gain hFE (Note) VCE=6V, Ic=2mA 70 - 700
Collector-Emi; Saturation
Voltage VCE (sat) IC= 100mA, I13: 10mA - 0.1 0.25 V
Transition Frequency fT VCE = 10V, IC = 1mA 80 - - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.0 3.5 pF
NF (1) 2il T glyéIC=0.1mA, f=100Hz, - 0.5 6
Noise Figure G= dB
NF (2) VCE=6V, 1c=0.IrnA, f=1kHz, 0 2 3
RG--10kn - .
Note .' hFE Classification o : 70--140, Y .. 120--240, GR : 200--400, BL : 350--700
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the ap Iications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third parties which may result from its use. No license is granted
, implication or otherwise under _any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein IS subject to change without notice.
1996-09-02 1/3
TOSHIBA 2SC2458(L)
IC - VCE IC - VCE
200 240
COMMON EMITTER COMMON
a' Ta=25°C a' EMITTER
g 160 g 200 . Ta=25°C
E 120 E
pt pt 120
2 80 a
O O 80
t 8 40
0 10 20 30 40 50 60 o 1 2 3 4 5 6 7
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V)
hFE - IC VCE(sat) - IC
3000 3
COMMON EMITTER ta; COMMON EMITTER
V =6V - I /I =10
w 1000 CE Y,...., 1 C B
j: ----- VCE=1V tif?
E 500 g "ii, 0.5
< 300 Ta=100°C xt; 0.3
C) Is 0
's 25 'cs
m -25 -
g 100 iitg 0.1
tD itf
g 50 cs?,':?; 0.05
D 30 fy' 0.03 25
10 0.01
0.1 0.3 1 3 10 30 100 300 0.1 0.3 1 3 10 30 100 300
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
VBE(sat) - IC IB - VBE
COMMON EMITTER 1000 COMMON EMITTER
IC/IB=10 500 VCE=6V
Ta = 25°C 300
15 (pA)
Ta= 100°C -
BASE—EMITTER SATURATION
VOLTAGE VBE(sal:) (V)
BASE CURRENT
0.1 0.3 1 3 10 30 100 300 0 0.4 0.8 1.2 1.6 2.0
COLLECTOR CURRENT 10 (mA) BACE-EMITTER VOLTAGE VBE (V)
1996-09-02 2/3
TOSHIBA
2SC2458(L)
TRANSITION FREQUENCY fT (MHz)
h PARAMETER
COMMON EMITTER
VCE = 10V
1000 Ta = 25°C
0.3 1 3 10 30
COLLECTOR CURRENT IC (mA)
h PARAMETER - VCE
COMMON EMITTER
f-- 270Hz, IC = 2mA, Ta = 25°C
1 3 10 30 100
COLLECTOR-EMITTER VOLTAGE VCE
h PARAMETER
COLLECTOR POWER DISSIPATION PC (mW)
h PARAMETER - IC
COMMON EMITTER
1000 VCE = 12v, f=27OHz, Ta=25°C
500 BL
hrex10-4
0.1 0.3 1 3 10 30
COLLECTOR CURRENT IC (mA)
PC - Ta
0 25 50 75 100 125
AMBIENT TEMPERATURE Ta (°C)
1996-09-02 3/3
www.ic-phoenix.com
.
