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2SC2360MATN/a1351avaiSi NPN planar. UHF amplifier.
2SC2360PANN/a759avaiSi NPN planar. UHF amplifier.
2SC2360PanasonicN/a1000avaiSi NPN planar. UHF amplifier.


2SC2360 ,Si NPN planar. UHF amplifier.PANASONIC INI)L/ELEKfSEhIy 7EC I) 'E‘IBEEzSH [1003155 L r#595229 Er. Bl-l s 2SC23602SC2360' U CCI V ..
2SC2360 ,Si NPN planar. UHF amplifier.Features. atiPGrytit,'ivxo/High power gain (PG)q 1'iFtrhitt NF 7yr0fla,,?Low NFq Tr t '7- F AGC (tt ..
2SC2360 ,Si NPN planar. UHF amplifier.Absolute Maximum Ratings (Ta = 25 "C)-'-T'r-'-r-r,-,''" .Item Symbol Value Unit-'--'--it--C-':----C ..
2SC2362 ,High-Voltage Low-Noise Amp ApplicationsAbsolute Maximum Ratings at Ta=25°CCollector to Base VoltageCollector to Emitter VoltageEmitter to ..
2SC2362-K ,High-Voltage Low-Noise Amp ApplicationsOrderiné number: EN 5725No.572D( ):2SA1016,1016K
2SC2368 ,NPN SILICON TRANSISTORFEATURES . NF 2.3 dB TYP. @ 500 MHz f o MAG 17 dB TYP. @ 500 MHz 22 E _ 35 a a $9. “:38. E ..
2SD633. ,POWER TRANSISTORS(7A,40W)TOSHIBA 2SD633,2SD6352SD633, ZSD635HIGH POWER SWITCHING
2SD635 ,POWER TRANSISTORS(7A,40W)APPLICATIONS INDUSTRIAL
2SD637 ,Silicon NPN epitaxial planer typeAbsolute Maximum Ratings (Ta=25˚C)n–3 2 1Parameter Symbol Ratings UnitCollector to base voltage V ..
2SD655 , Silicon NPN Epitaxial
2SD655 , Silicon NPN Epitaxial
2SD662 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max Unit2SD0662 V I ..


2SC2360

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