2SC2270 ,Silicon NPN Power Transistors TO-126 package-..-_. .uu.._._n‘ ‘u-uu.u_.._.v- .w.SILICON NPN EPITAXIAL TYPE (PCT PROCESS)STROBO FLASH
2SC2271 ,CHROMA OUTPUT, HORIZONTAL DEFLECTION DRIVER APPLICATIONSSANYO SEMICONDUCTOR CORPDefle493E. Small-sized color TV chroma use and Bdriver use.Absolute Maximum ..
2SC2271 ,CHROMA OUTPUT, HORIZONTAL DEFLECTION DRIVER APPLICATIONSSANYO SEMICONDUCTOR CORPDefle493E. Small-sized color TV chroma use and Bdriver use.Absolute Maximum ..
2SC2274 , LOW FREQUENCY POWER AMP APPLICATIONS
2SC2274E , TO-92 Plastic Package Transistors (NPN)
2SC2274-E , TO-92 Plastic Package Transistors (NPN)
2SD596L ,Silicon transistorELECTRICAL CHARACTERISTICS (TA=25 ''C)
T CHARACTER'ISTIC _ ' . SYMBOL _ . . , _ TEST CONDITIONS
..
2SD596-T1B ,Silicon transistorFEATURES
0 .Micro package.
0 High DC current gain. hFE ." 200 TYP. (Veg = 1.0 V, lc = 100 mA)
. ..
2SD596-T2B ,Silicon transistorapplications.
I 1ti!.r1-1iils' _
2SD600 ,NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier ApplicationsFeatures Package Dimensions · High breakdown voltage V 100/120V, HighCEO unit:mmcurrent 1A.2009B · ..
2SD600 ,NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymboC0 ondition2K SB631, D602t SB631K, D600 Uni ..
2SD600K ,NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymboC0 ondition2K SB631, D602t SB631K, D600 Uni ..
2SC2270
Silicon NPN Power Transistors TO-126 package
SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2 SC 2 2 7
STROBO FLASH APPLICATIONS '
MEDIMUM POWER AMPLIFIER APPLICATIONS. Unit in mm
FEATURES: JC'lr11, "1--t11s
. High DC Current Gain 4,y -
' hFE=140W450 (VCE=2V, IC=0.5A)
hFE=70 (Min.)(VCE=2V. Ic=4A) "sc/tle.: I
IZDMAX
. Low Saturation Voltage
t VCE(sat)=l'0v(Max') (IC=4A, IB=0.1A)
r/ 32-Y
' High Collector Power Dissipation ii, Jt
I Pc=10W (Tc=25°C), Pc=l.0w (Ta--25''C) H 081 E
, I 155 o,
HAXIHUH RATINGS (Ta=25°C) two i176 g;
CHARACTERISTIC . SYMBOL RATING UNIT
Collector-Base Voltage VCBO 50 V . =
collector-hitter Voltage VCES ho ll n 2.3 23 i),
VCEO 20 m . Lo.,
Emitter-Base Voltage VEBO 8 V d;
Collector DC IC 5 A -
Current Pulsed (Note 1) ICP 8 A I. EMITTER . ,
2. COLLECTOR mam SINK,
Emitter DC IE .-5 A a BASE
Current Pulsed(Note I) IE}: -8 JEDEC TO-IV
Collector Power Ta=25°C P 1.0 w H1 J
Dissipation Tc=25°C C 10 A _
Junction Temperature Td 150 "c TOSHIBA 'h-tsplit
Storage Temperature Range Tstg -55m150 "c Mounting Kit No, AC46C
Note 1 t Pulse Test ' Weight , 0.72g
Pulse Width '= 10ms (Max.)
Duty Cycle = 30 , (Max.)
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=40V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=8V, Ic=0 - - 100 nA
Collector-Emitter ll', ' = = - -
Breakdown Voltage (BR)CEO IC lOmA, IB 0 20 V
Emitter-Base .. a = - -
Breakdown Voltage V(BR)EBO IE lmA, 1c 0 8 v
hFE(1) vCE=2v, 10:0.5A 14o - 450
DC Current Gain '(Note 2)
hFE(2) VCE=2V, Ic=4A 70 - -
o ector-Emitter Saturation TICE(sat) IC=4A, IB=0.1A ... - 1.0 ll
Base-Emitter Voltage VBE VCE=2V, Ic=4A - - 1.5 V
Transition Frequency fT VCE=2V, IC=0.5A - 100 - MHz
Collector Output Capacitance Cob vcB--10V,TExz0,b--1NHa - 40 - pF
Note 2 t hpgu) Classification A t 1404240, B '. 200'u330, C l 300N450
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Io - VCE
10 8 c VBE
A cowou EMITTER
c: Tc=25°C (,',e5,1fl/""'"R
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hFE - IC '
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M o (12 04. 0.6 as 1.0 1.2 IA
s'? 600 Te---10tm BAtul-fiNIT'NilR VOLTAGE VBE (v)
800 25
< SAFE OPERATING AREA
e, 100 so
e; X SINGLE NONREPETITIVE PULSE
E 50 Tc=25”c
g 30 XX PULSE WIDTH=10 ma ( MAX)
" common EMITTER DUTY cituar---sog (MAX) Tc=25°c
o _ 10
a 1 Tc =21f 10 MAX ( PULSED )X>:<- "
301 (105 005 cu als 05 1 3 5 10 j; - 10 MAX A
common CURRENT Io ( A ) v (CONTINUOUS , f
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oh (st) "o
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= VCE(eat) - Ito -z ls _ *
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9 COMMON EMI TTER 'd i'si 00 N, 1
ir., Ic /Ta=4° ttl y "ss
- pr 1 O 1
ti' _ g \ N
A 05 , _
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Fe Cl, th co 05
,ii, g ~GURVES MUST BE DERATEL
a's _ tll t13 FLINEARLY WITH INCREASE .
g M IN TEMPERATURE 3
[l, 5005 -
q A r o
Cy 000 M
o > 01 (103 tll as 05 1 3 5 10 g'
COLLECTOR CURRENT 10 (A) . 011 J 3 "l, l I I '10 tltr 50
tDLLW3TOR--EMrTTW1 VOLTAGE VCE (v)
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