2SC2240 ,Transistor Silicon NPN Epitaxial Type (PCT process) Low Noise Audio Amplifier Applicationsapplications. This device is designed to lower noise figure in the region of low signal source impe ..
2SC2240-GR , Low Noise Audio Amplifier Applications
2SC2240-GR , Low Noise Audio Amplifier Applications
2SC2258 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitEmitter-base ..
2SC2258 ,Power DeviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector-base voltage (Emitter open ..
2SC2267 , SILICON NPN TRIPLE DIFFUSED HIGH VOLTAGE SWITCHING
2SD592 ,Silicon NPN epitaxial planer type(For low-frequency output amplification)Absolute Maximum Ratings (Ta=25˚C)nParameter Symbol Ratings Unit2SD592Collector to 30V VCBO+0.2 +0 ..
2SD592A ,SILICON TRANSISTORSAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit+0.15 +0.150.45 0.45–0.1 –0.1Collect ..
2SD596 ,AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDFEATURES
0 .Micro package.
0 High DC current gain. hFE ." 200 TYP. (Veg = 1.0 V, lc = 100 mA)
. ..
2SD596L ,Silicon transistorELECTRICAL CHARACTERISTICS (TA=25 ''C)
T CHARACTER'ISTIC _ ' . SYMBOL _ . . , _ TEST CONDITIONS
..
2SD596-T1B ,Silicon transistorFEATURES
0 .Micro package.
0 High DC current gain. hFE ." 200 TYP. (Veg = 1.0 V, lc = 100 mA)
. ..
2SD596-T2B ,Silicon transistorapplications.
I 1ti!.r1-1iils' _
2SC2240
Transistor Silicon NPN Epitaxial Type (PCT process) Low Noise Audio Amplifier Applications
2SC2240 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2240 Low Noise Audio Amplifier Applications
The 2SC2240 is a transistor for low frequency and low noise
applications. This device is designed to lower noise figure in the region of
low signal source impedance, and to lower the pulse noise. This is
recommended for the first stages of Equalizer amplifiers. Low noise : NF = 4dB (typ.) RG = 100 Ω, VCE = 6 V, IC = 100 µA, f = 1 kHz : NF = 0.5dB (typ.) RG = 1 kΩ, VCE = 6 V, IC = 100 µA, f = 1 kHz Low pulse noise: Low 1/f noise High DC current gain: hFE = 200~700 High breakdown voltage: VCEO = 120 V
Maximum Ratings (Ta ��� � 25°C)
Unit: mm
Weight: 0.21 g (typ.)
