2SC2236 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrcurren ..
2SC2238 , SILICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS)
2SC2238B , SILICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS)
2SC2240 ,Transistor Silicon NPN Epitaxial Type (PCT process) Low Noise Audio Amplifier Applicationsapplications. This device is designed to lower noise figure in the region of low signal source impe ..
2SC2240-GR , Low Noise Audio Amplifier Applications
2SC2240-GR , Low Noise Audio Amplifier Applications
2SD569 , isc Silicon NPN Power Transistor
2SD5702 , Silicon NPN Power Transistors
2SD5702 , Silicon NPN Power Transistors
2SD5703 , isc Silicon NPN Power Transistor
2SD571 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
SYMBOL CHARACTERISTIC
DC Current Gain
DC Current Gain
..
2SD592 ,Silicon NPN epitaxial planer type(For low-frequency output amplification)Absolute Maximum Ratings (Ta=25˚C)nParameter Symbol Ratings Unit2SD592Collector to 30V VCBO+0.2 +0 ..
2SC2236
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS
TOSHIBA 2SC2236
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
2SC2236
AUDIO POWER AMPLIFIER APPLICATIONS Unit in mm
5.1 MAX.
0 Complementary to 2SA966 and 3 Watts Output Applications. '
0.75MAX.
1.0MAX. -
MAXIMUM RATINGS (Ta=25°C) 32m: , ii 'i,
CHARACTERISTIC SYMBOL RATING UNIT N _
Collector-Base Voltage VCBO 30 V 1.27 1.27
Collector-Emitter Voltage VCEO 30 V 1 2 3 g
Emitter-Base Voltage VEBO 5 V s-?,). g
_ ' _ d
Collector Current 1C 1.5 A m "h © r E
Base Current IB 0.15 A l. EMITTER
. . . 2. COLLECTOR
Collector Power Dissipation PC 900 mW 3. BASE
Junction Temperature Tj 150 T JEDEC TO-92MOD
Storage Temperature Range Tstg -55--150 °C JEITA -
TOSHIBA 2-5J1A
Weight : 0.36g (Typ.)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 30V, IE = 0 - - 100 nA
Emitter Cut-off Current IEBO VEB = 5V, IC = 0 - - 100 nA
Collector-Emitter Breakdown
Voltage V (BR) CEO 1C - 10mA, IB - 0 30 - - V
Emitter-Base Breakdown
Voltage V (BR) EBO IE - lmA, IC - 0 5 - - V
DC Current Gain hFE (Note) VCE =2V, IC =500mA 100 - 320
Collector-Emitter Saturation
Voltage VCE (sat) 1C - 1.5A, IB - 0.03A - - 2.0 V
Base-Emitter Voltage VBE VCE = 2V, IC = 500mA - - 1.0 V
Transition Frequency fT VCE = 2V, IC = 500mA - 120 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = o, f = IMHz - - 30 pF
(Note) : hFE Classifieation o .' 100--200, Y : 160--320
1 2001-11-05
TOSHIBA
IC - VCE
1600 10
COMMON EMITTER
E oo Ta=25"C
S? 1200
a 1000
:5: 600
.1 400
8 IB=1mA
0 2 4 6 8 10 l2 14 16 18
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE (sat) - IC
3 COMMON EMITTER
IC/IB =50
VCE(sa0 (V)
Ta = - 25°C
VOLTAGE
COLLECTOR-EMITTER SATURATION
10 30 100 300 1000 3000
COLLECTOR CURRENT IC (mA)
COLLECTOR POWER DISSIPATION
0 20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE Ta (°C)
COLLECTOR CURRENT 1C (mA) DC CURRENT GAIN hFE
10 (A)
COLLECTOR CURRENT
2SC2236
hFE - IC
30 COMMON EMITTER
vCE=2v
1 3 10 30 100 300 1000 3000
COLLECTOR CURRENT 10 (mA)
IC - VBE
Ta=100°C
COMMON EMITTER
VCE=2V
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
BASE-EMITTER VOLTAGE VBE (V)
SAFE OPERATING AREA
5 I l I flll I 1 . .
-IC MAX.(PULSED) .2(. -100mskt. "hy"'
-rc MAX. "V. s4 \ Ints).K,
(CONTINUOUS) N
"s N,,
N 's. It
N . "N 's A
N Isy.(. , , "
0.5 N "t
- DC OPERATION s ,
0.3 - - a
Ta=25 C \
.)k. SINGLE NONREPETITIVE N
PULSE Ta=25°C 's
0.05 CURVES MUST BE DERATED N
LINEARLY WITH INCREASE
0 02 IN TEMPERATURE. VCEO MAX.
. 0.3 1 3 10 30
COLLECTOR-EMITTER VOLTAGE VCE (V)
TOSHIBA 2SC2236
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-11-05
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