2SC2223 ,HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDFEATURES
q Micro package. T
0 High gain bandwidth product.' f-r = 600 MHz TYP.
E
E 0 Low ou ..
2SC2223-T1B ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta =" 25 °C)
CHARACTERISTIC SYMBOL . . . . TEST CONDITIONS
--'-
..
2SC2223-T2B ,Silicon transistorFEATURES
q Micro package. T
0 High gain bandwidth product.' f-r = 600 MHz TYP.
E
E 0 Low ou ..
2SC2230 ,Transistor Silicon NPN Triple Diffused Type (PCT Process) HIGH VOLTAGE GENERAL AMPLIFIER AND COLOR TV CLASS B SOUND OUTPUT APPLICATIONSTOSHIBA 2SC2230,2SC2230ATOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)9ftt''DTIl ..
2SC2230 ,Transistor Silicon NPN Triple Diffused Type (PCT Process) HIGH VOLTAGE GENERAL AMPLIFIER AND COLOR TV CLASS B SOUND OUTPUT APPLICATIONSAPPLICATIONS I :54 MAX} l0 High Voltage : VCE0=18OV (2SC2230A)0 High DC Current Gain.OJSMAXMAXIMUM ..
2SC2233 , NPN SILICON POWER TRANSISTOR(for TV horizontal deflection output applications)
2SD476 , Silicon NPN Power Transistors
2SD476A , Silicon NPN Power Transistors
2SD5072 , isc Silicon NPN Power Transistor
2SD5072 , isc Silicon NPN Power Transistor
2SD525 ,Silicon NPN Power Transistors TO-220C packageELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SD526 ,POWER TRANSISTORS(4A,80V,30W)ELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC2223
