2SC2216 ,TO-92 Plastic-Encapsulate Biploar TransistorsApplications Unit: mm High gain: G = 33dB (typ.) (f = 45 MHz) pe Good linearity of h . FE Ma ..
2SC2221 , NPN SILICON EPITAXIAL TRANSISTOR
2SC2223 ,HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDFEATURES
q Micro package. T
0 High gain bandwidth product.' f-r = 600 MHz TYP.
E
E 0 Low ou ..
2SC2223-T1B ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta =" 25 °C)
CHARACTERISTIC SYMBOL . . . . TEST CONDITIONS
--'-
..
2SC2223-T2B ,Silicon transistorFEATURES
q Micro package. T
0 High gain bandwidth product.' f-r = 600 MHz TYP.
E
E 0 Low ou ..
2SC2230 ,Transistor Silicon NPN Triple Diffused Type (PCT Process) HIGH VOLTAGE GENERAL AMPLIFIER AND COLOR TV CLASS B SOUND OUTPUT APPLICATIONSTOSHIBA 2SC2230,2SC2230ATOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)9ftt''DTIl ..
2SD471A , AUDIO FREQUENCY POWER AMPLIFIER
2SD471A , AUDIO FREQUENCY POWER AMPLIFIER
2SD471A , AUDIO FREQUENCY POWER AMPLIFIER
2SD476 , Silicon NPN Power Transistors
2SD476A , Silicon NPN Power Transistors
2SD5072 , isc Silicon NPN Power Transistor
2SC2216
Transistor Silicon NPN Epitaxial Planar Type TV Final Picture IF Amplifier Applications
2SC2216,2SC2717 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC2216,2SC2717 TV Final Picture IF Amplifier Applications High gain: Gpe = 33dB (typ.) (f = 45 MHz) Good linearity of hFE.
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C)
Unit: mm
Weight: 0.21 g (typ.)
