2SC2209 ,Power DeviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit0.75±0.1Collector-base voltage (Emit ..
2SC2216 ,TO-92 Plastic-Encapsulate Biploar TransistorsApplications Unit: mm High gain: G = 33dB (typ.) (f = 45 MHz) pe Good linearity of h . FE Ma ..
2SC2221 , NPN SILICON EPITAXIAL TRANSISTOR
2SC2223 ,HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDFEATURES
q Micro package. T
0 High gain bandwidth product.' f-r = 600 MHz TYP.
E
E 0 Low ou ..
2SC2223-T1B ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta =" 25 °C)
CHARACTERISTIC SYMBOL . . . . TEST CONDITIONS
--'-
..
2SC2223-T2B ,Silicon transistorFEATURES
q Micro package. T
0 High gain bandwidth product.' f-r = 600 MHz TYP.
E
E 0 Low ou ..
2SD471A , AUDIO FREQUENCY POWER AMPLIFIER
2SD471A , AUDIO FREQUENCY POWER AMPLIFIER
2SD471A , AUDIO FREQUENCY POWER AMPLIFIER
2SD476 , Silicon NPN Power Transistors
2SD476A , Silicon NPN Power Transistors
2SD5072 , isc Silicon NPN Power Transistor
2SC2209
