2SC2178 ,VHF Band Power Amplifier ApplicationsFEATURES t. Output Power t Po=15w (Min.)( f=175MHz, Vcc=12.5V, Pr=1.3il ). loot, Tested for Load Mi ..
2SC2209 ,Power DeviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit0.75±0.1Collector-base voltage (Emit ..
2SC2216 ,TO-92 Plastic-Encapsulate Biploar TransistorsApplications Unit: mm High gain: G = 33dB (typ.) (f = 45 MHz) pe Good linearity of h . FE Ma ..
2SC2221 , NPN SILICON EPITAXIAL TRANSISTOR
2SC2223 ,HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDFEATURES
q Micro package. T
0 High gain bandwidth product.' f-r = 600 MHz TYP.
E
E 0 Low ou ..
2SC2223-T1B ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta =" 25 °C)
CHARACTERISTIC SYMBOL . . . . TEST CONDITIONS
--'-
..
2SD471A , AUDIO FREQUENCY POWER AMPLIFIER
2SD471A , AUDIO FREQUENCY POWER AMPLIFIER
2SD471A , AUDIO FREQUENCY POWER AMPLIFIER
2SD476 , Silicon NPN Power Transistors
2SD476A , Silicon NPN Power Transistors
2SD5072 , isc Silicon NPN Power Transistor
2SC2178
VHF Band Power Amplifier Applications
SILICON NPN EPITAXIAL PLANAR TYPE
VHF BAND POWER AMPLIFIER APPL
FEATURES t
. Output Power t
( f=175MHz, Vcc=12.5V,
. loot, Tested for Load Mismatch Stress at All Phase
Angles with 30:1 VSWR (? vcc=15v, P1=l.3w, f=175MHz
MAXIMUM RATINGS (Ta=25 "cy
ICATIONS.
Pot-.1 " (Min .)
P1=1.3W )
5"230217
¢asMAX.
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 35 V
Co1Leetor-Emitter Voltage cho 18 ll 2 g
Emitter-Base Voltage VEBO 3.5 V 8.
1. M N
Collector Current Ic 3.5 A a $$ng
Collector Power Dissipation a EMITTER
P l. 0L EC OR
(Tc=25 "cy C 35 W o L I
J 1 T T 175 "c JEDB0 -
ant on emperature d o EIAJ -
Storage Temperature Range Tstg -65~175 C TOSHIBA 2-10HIA
ELECTRICAL CHARACTERISTICS (Ta=25 °C)
Weight I 4.0g
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current Icno var--15ir, IE=0 - - 1.0 nh
Collector-Base Breakdown - = ... -
Voltage V(BR)CBO Ic-lOmA, IE 0 35 ll
co11eetor-Emitter Breakdown - _
Voltage V(BR)CE0 TC=25mA, IB-O 18 - - ll
Emitter-Base Breakdown
' = = . - - ll
Voltage V(BR)EB0 IE lmA, rc 0 3 5
DC Current Gain hFE VCE=5V, Ic=lA 10 - -
Collector Output Capacitance Cob VcB=10V, IE=0, f=1MHz - - 80 pF
Output Power Po (Fig.) 15 18 - W
Power Gain Gpe Vcc=12.5V, f=175MHz, 10.6 11.4 - dB
Collector Efficiency 8c P1=1.3w 60 72 - Z
Series Equivalent Input Z - 1.25 - CI
Impedance in Vcc=12.5V. f=175MHz, +j0.6
Series Equivalent Output Po=15w 4.9 -
Impedance ZOOT - -d 3 . o n
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luv VIIII u. 0";
Fig, Po TEST CIRCUIT
Pi 1 l 3 04 Po
Rg=500 RL=tson
c g: imm $1.2
2 a 06 Cs
C1 l --20pF
02,03,04 t "-30pF
C5 t 1000pF FEED THROUGH
C6 t 0.91M? CERAMIC CONDENSER
L1,L3 ' " SILVER PLATED COPPER HIRE, 61D, IT
L2 t " SILVER PLATED COPPER HIRE, 61D, 2T
RFC l " ENAMEL COATED COPPER HIRE, 6ID, 3T
Po, T, _ Pi Po - V00
r=1r75qu A f=l'75MHz
' 1roo=12Aslt t L 13:st ,
Tc=25'c o A Tc=25'c /
g 20 w ts 20
v ..--'" v
o ,M 'd .3 /'
w,,.-''" H a:
h' 16 ",---'" E g 16 /
, 4 53 ti, /
Bil n: Fi f
S -.,,..Y.... -. - - f?, E /
g 12 " -.-u-- . " a z: 12
to - .4 o /
L214 r18 IR 1.6 a 8
. .o ' e 12 16
INPUT POWER pi (W)
SUPPLY VOLTAGE v00 (v)
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