2SC2120 ,Transistor Silicon NPN Epitaxial Type (PCT process) Audio Power Amplifier Applicationsapplications. Complementary to 2SA950 Maximum Ratings (Ta 25°C)Characteristics Symbol Rat ..
2SC2166 ,Conductor Products, Inc. - Silicon NPN Transistor Final RF Power Output
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2SC2166 ,Conductor Products, Inc. - Silicon NPN Transistor Final RF Power Output
2SC2178 ,VHF Band Power Amplifier ApplicationsFEATURES t. Output Power t Po=15w (Min.)( f=175MHz, Vcc=12.5V, Pr=1.3il ). loot, Tested for Load Mi ..
2SC2209 ,Power DeviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit0.75±0.1Collector-base voltage (Emit ..
2SD467 , Silicon NPN Epitaxial
2SD468 , NPN Epitaxial Silicon Transistor
2SD468 , NPN Epitaxial Silicon Transistor
2SD468 , NPN Epitaxial Silicon Transistor
2SD471A , AUDIO FREQUENCY POWER AMPLIFIER
2SD471A , AUDIO FREQUENCY POWER AMPLIFIER
2SC2120
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Power Amplifier Applications
2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2120 Audio Power Amplifier Applications High hFE: hFE (1) = 100~320 1 watts amplifier applications. Complementary to 2SA950
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C)
hFE (1)
(Note)
Note: hFE (1) classification O: 100~200, Y: 160~3200
Unit: mm
Weight: 0.21 g (typ.)