2SC2098 ,Trans GP BJT NPN 70V 6A 3-Pin(3+Tab) TO-220ABapplications C0 RF power output 13w MIN. f=28MHz Tce=127High power grain 11d2 MIN.Unit in mm0 Recom ..
2SC2120 ,Transistor Silicon NPN Epitaxial Type (PCT process) Audio Power Amplifier Applicationsapplications. Complementary to 2SA950 Maximum Ratings (Ta 25°C)Characteristics Symbol Rat ..
2SC2166 ,Conductor Products, Inc. - Silicon NPN Transistor Final RF Power Output
2SC2166 ,Conductor Products, Inc. - Silicon NPN Transistor Final RF Power Output
2SC2166 ,Conductor Products, Inc. - Silicon NPN Transistor Final RF Power Output
2SC2178 ,VHF Band Power Amplifier ApplicationsFEATURES t. Output Power t Po=15w (Min.)( f=175MHz, Vcc=12.5V, Pr=1.3il ). loot, Tested for Load Mi ..
2SD467 , Silicon NPN Epitaxial
2SD468 , NPN Epitaxial Silicon Transistor
2SD468 , NPN Epitaxial Silicon Transistor
2SD468 , NPN Epitaxial Silicon Transistor
2SD471A , AUDIO FREQUENCY POWER AMPLIFIER
2SD471A , AUDIO FREQUENCY POWER AMPLIFIER
2SC2098
Trans GP BJT NPN 70V 6A 3-Pin(3+Tab) TO-220AB
smacowbucroa
TOSHIBA TRANSISTOR
TECHNICAL DATA SILICON NPh' EPITAXIAL PLANAR
O The 28073098 is designed for 25~50MHZ RY power
amplifier applications
0 RF power output 13W MIN. T.ccesl27
High power gain 11d2 MIN.
f=28MHz
Unit in mm
C) Recommended for 12tar PEP SSB Citizen Band transceivor
103M336.
..._...__._..4
80 i4 ¢35222
In y) _-"----
M ' “J, _ n
H! J 'il
(T'-,,t,Ti'ir,r'r.".'rrr,-'i'if,r.
. F . , - .o w $L-t be
mum RATINGS Ja--25 c) l---'-"'"'"'"-"]'", :3]:
(hEARA0(Ffs'R1S1'TC SYINBOL RATING UNIT 20t ass-ii 33
Collector to Base Voltage V030 '70 V _
l. DASE
Collector to Eyrritter V . O 2. CoLLigi'.yrOit(HygaTtrrNrd
Voltage (REB=1(X2) GER 7 V G. MINER
Emitter to Base Voltage VEBO (. Ir
TEDEC TO-ri'2C.IA53
Collector Current IC 6 A diti h t
. EIAJ 'SC-tlb"
Emitter Current IE 7.6 A J
. TOSHIBA 2-10 1
Collector Power ' g
o PC 25 W
Dissipation (Tc=25 c)
Junction Temperature I'd 150-. 't
torage Temperature i‘stg 55 --150 °C
SEMICONDUCTOR _
TECHNICAL DATA
ELECTRI CAL CHARACTERISTICS L Ta =25 "c
Cf1ARA01EiuSrN0 SYMBOL CONDITION MIN TYP MAX
Collector Cutoff Current ICBO Vay--407 IE=O - - 0.1
Collectcr to Base V T '.Y . = - -
Breakdown Voltage (BECBO C 1M IE 0 7O
Collector to Emitter w.. . _ =
Breakdown Voltage(REB,1 a) VCBPQCER Ity 1W 113 O 79 --.- .....-
Emitter to Base V e 1 I =10mA I :0 -.-- -
reakdown V oltage (BQhBO C B 4
DO Current Gain (Note1) hFE VCE‘SV IC=4A _ 20 - 100
Output Capacitance Cob VCB=10V 13:0 f=1MHz - 55 80
Power Output (1) Fig l' Po 1 _ vcc=12v f=28MHz r _
( ) ( ) Pi=1w ¢(c260% 15 15
Power Out ut 2 Po 2) VCC=12V fiSONEZ - -
P ( ) . ( Pi‘BW. qc36% 16
Note 1 : Pulse vidtp1i,10a1s Duty cyc1e1Bi4
Pig 1 Output Power Test Circuit (r--27 me)
Input C1 Fl C3 Je _ Output
C1 I~1 'OOpF Variable Capacitor __EU:_
C2 C3 Z~153pF Variable Capacitor i i -..-..-
C4 I~300pF Variable Capacitor H Unit mm
L1 L3 : frus Silver Plated Copper Wire " D=1O tr,
L? : 1’ 5T D=10 . t=2
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