2SC2075 ,Silicon NPN Power Transistors TO-220 packageTOSHIBA f0ISCRfrTE/0PT0y Sl, os:Fvrizso EIE||37H7IJ 3 r9097250 TOSHTBA di:nii'bRirrE/oPTos SEC 0747 ..
2SC2078 ,NPN Epitaxial Planar Silicon Transistor 27MHz RF Power Amplifier ApplicationsOrdering number:EN462ENPN Epitaxial Planar Silicon Transistor2SC207827MHz RF Power Amplifier Applic ..
2SC2078. ,NPN Epitaxial Planar Silicon Transistor 27MHz RF Power Amplifier ApplicationsOrdering number:EN462ENPN Epitaxial Planar Silicon Transistor2SC207827MHz RF Power Amplifier Applic ..
2SC2086 , NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers in HF band Mobile radio applications)
2SC2086 , NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers in HF band Mobile radio applications)
2SC2098 ,Trans GP BJT NPN 70V 6A 3-Pin(3+Tab) TO-220ABapplications C0 RF power output 13w MIN. f=28MHz Tce=127High power grain 11d2 MIN.Unit in mm0 Recom ..
2SD415 ,Audio Frequency Power AmplifierDATA SHEETSILICON POWER TRANSISTOR2SB548, 549/2SD414, 415PNP/NPN SILICON EPITAXIAL TRANSISTOR ..
2SD467 , Silicon NPN Epitaxial
2SD468 , NPN Epitaxial Silicon Transistor
2SD468 , NPN Epitaxial Silicon Transistor
2SD468 , NPN Epitaxial Silicon Transistor
2SD471A , AUDIO FREQUENCY POWER AMPLIFIER
2SC2075
Silicon NPN Power Transistors TO-220 package
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9097250 TOSHIBA (DISCRETE/OPTO) 56C 07470 D'F:33~(D7
SILICON NPN EPITAXIAL TYPE (r'eTrToctiss) _, 2 SC? 0 75 l ..'..".
27MHz POWER AMPLIFIER APPLICATIONS.' ' Unit ln mm
10.3MAX. .
FEATURES: P-w-co'-'-
. Recommended for Output Stage Application of _ - If' Ag A
Ari 4w 'Tiisnsmiet:er. A h g; f,
P . High Power Gain. p,
' Wide Area of Safe Opgration. i _
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MAXIMUM RATINGS (Ta=25°C) ' -
taARACTER7.STrc SYMBOL PATING . UNIT g
Collector-Base Voltage VCBO 80 V 51 t
Collector-Em/yr Voltage 2 G
RBE=509 . VCER M - V ia-i.'.]
Emitter-isase Voltage . VEBO. 4.0 V :3
Collector Current IC 4 . A I. BASE
. _ . 2. COLLECTOR (HEAT SINK)
Emitter Current IE -4 A a EMITTER '
Collector Power Dissipation
. (Tc=25°C) PC 10 w JEDEC " TO - zzoAB
Junction Temperature Td 150 "c EIAJ sc - 46
Storage Temperature Range Tsté -55ru150 "c TOSHIBA 2 _ 10A IA
i Mounting Kit No. A075
ELECTRICAL CHARACTERISTICS (Ta=25°C) Height ' 1.9g
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current: ICBO VCB=30V, IE=0 - - 10 uA
Breakdown Co11eetor-Erutter V(BR)CER IC=10mA, RBE=50I2 80 - - V
Voltage Emitter-Base V(BR)EBO IE=1 . OmA, IC=0 4 . 0 - ... V
.-_. h " V "fill I =0.5A 25 - -
DC Current Gain PEG) CE ' C
hFE(2) VCE=2V, IC=3A 15 - -
Collector-Ernie: _ = - -
Saturation Voltage Vce(sat) 1c=3A, IE 0.3A 1.5 V
Transition Frequency fT VCE=5V, Ic=500mA - 100 - MHz
Co11ect:or.Output Capacitance cob 1rcB=10v,hy=0,f---Itmz - 40 - pF
output'Power (Fig. 1) Po Vcc=12ir,Pr--0.3U,f---27MHa 3.5 - - w
Fig.1 Po TEST CIRCUIT .
0 L1 f ca La - c1 :~100pF, cg,cg:~150pF, c4z~300p1m (35:10pr
P y., 06 : 0.01/41? R : 2509
R8=50 3‘75“) LI : 0.8mm! UEW,'7T,8mm LD La : 0.6mm! UEW,5T,8mm CD
La '.ti8aurW Umw.10T.amm 1.D RFC 2035mm¢ UEW,17T,5mm I.D
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Tc=25'c _
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INPUT POWER Pi (w) SUPPLY VOLTAGE vcc (v)
hFE - 10 g " - IC
COMMON EMITTER B COMMON EMITTER
a VCE=5V be VCE=5V
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Fe 50 =
a 1? E
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OOLLEpTOR CURRENT lo (A) COLLECTOR CURRENT 10 (A)
Cots - v03 P - Ta
A500 0
Mo IE=0 G 'l‘c=Ta
f=1MHz INFINITE HEAT SINK
T =25'c
0 © NO HEAT SINK
COLLECTOR POWER DISSIPATION
OUTPUT CAPACITANCE cm, (pF
o 25 tio " 100 125 150 175
t30LLliDTW1-BAt01 VOLTAGE vors (v) AMBIENT TEMPERATURE Ta (ta)
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TOSHIBA 4HyISCRirTE/0PT01 St, DEan-avasu DDU
9097250 TOSHIBA (DISCRETE/OPTO) Art: 07473 DT-33~0’7
APPLICATfON CIRCUIT CHARACTERISTIC
Po - VIN .- - V0.0? - Vcc
f=27MHz f=27MHz . I sh '
Te = M t; vec=2mev 52 22 “Tc = 2trc 2??!) 2' I
See Fig.2 3 l Sea Fig.2 ,3: "sf
A 'd A l " I
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ta - 28- a tt .l
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10 cy t ,
20 . " o ll
tio 100 150 200 250 _ o a 16 24 &
INPUT VOLTAGE V]: N tmv) SUPPLY vo LTAGE Veg (v)
80% MODULATION SPECTRUM ' 85% MODULATION SPECTRUM
EMISSION LIMITATION (FCC) _ EMISSION LIMITATION (FCC)
rc=2'mnz I rc=2vMuz I
rm: 2.5kHz rm: 2.5kHz I
m= 0.8 In: 0.85 I
Vin=150mV V1n=150mv
A To =26t ' - EMISSION A To =25'c EMISSION
t) 800 Pi 2 LIMITATION 53 See F183 LIMITATION
' - - - - c v - -- J L
it I E
MODULAT ION MODULATION
BPECTR SPECTR
-20k ~10]: 0 10k 20k ' lzok -10k o 10k 20k
CENTER FREQUENCY r0 (kHz) CENTER FREQUENCY fe (kHz)
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