2SC2073A ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER AND VERTICAL OUTPUT APPLICATIONSELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcurr ..
2SC2075 ,Silicon NPN Power Transistors TO-220 packageTOSHIBA f0ISCRfrTE/0PT0y Sl, os:Fvrizso EIE||37H7IJ 3 r9097250 TOSHTBA di:nii'bRirrE/oPTos SEC 0747 ..
2SC2078 ,NPN Epitaxial Planar Silicon Transistor 27MHz RF Power Amplifier ApplicationsOrdering number:EN462ENPN Epitaxial Planar Silicon Transistor2SC207827MHz RF Power Amplifier Applic ..
2SC2078. ,NPN Epitaxial Planar Silicon Transistor 27MHz RF Power Amplifier ApplicationsOrdering number:EN462ENPN Epitaxial Planar Silicon Transistor2SC207827MHz RF Power Amplifier Applic ..
2SC2086 , NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers in HF band Mobile radio applications)
2SC2086 , NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers in HF band Mobile radio applications)
2SD415 ,Audio Frequency Power AmplifierDATA SHEETSILICON POWER TRANSISTOR2SB548, 549/2SD414, 415PNP/NPN SILICON EPITAXIAL TRANSISTOR ..
2SD467 , Silicon NPN Epitaxial
2SD468 , NPN Epitaxial Silicon Transistor
2SD468 , NPN Epitaxial Silicon Transistor
2SD468 , NPN Epitaxial Silicon Transistor
2SD471A , AUDIO FREQUENCY POWER AMPLIFIER
2SC2073A
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER AND VERTICAL OUTPUT APPLICATIONS
TOSHIBA
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
2SC2073A
POWER AMPLIFIER APPLICATIONS
2SC2073A
Unit in mm
VERTICAL OUTPUT APPLICATIONS
0 Wide Safe Operating Area.
0 Complementary to 2SA940A E
MAXIMUM RATINGS (Tc = 25°C) d
CHARACTERISTIC SYMBOL RATING UNIT 0.75 t 0.1 5 Cs''
Collector-Base Voltage VCBO 150 V '
. 2.54:0.25 2.54:0.25
Collector-Emi; Voltage VCEO 150 V
Emitter-Base Voltage VEBO 5 V i',-',., 1 2 3 _N' C;
Collector Current 1C 1.5 A tij.:=EE' It
Base Current IB 0.5 A o
Collector Power Ta-- 25°C PC 2.0 W ;- ESSLEECTOR
Dissipation Te=25T 25 iemnm
Junction Temperature Tj 150 "C
a JEDEC -
Storage Temperature Range Tstg - 55--150 C
JEITA SC-67
TOSHIBA 2-10R1A
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
Weight : 1.7g (Typ.)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 120V, IE = 0 - - 10 PA
Emitter Cut-off Current IEBO VEB = 5V, 10 = 0 - - 10 PA
DC Current Gain hFE VCE = 10V, IC = 500mA 40 75 140
Collector-Emitter Saturation - -
Voltage VCE (sat) IC - 500mA, 1B - 50mA - - 1.5 V
Base-Emitter Voltage VBE VCE = 10V, IC = 500mA 0.65 0.75 0.85 V
Transition Frequency fT VCE = 10V, 10 = 500mA - 4 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = O, f = lMHz - 35 - pF
TOSHIBA 2SC2073A
IC - VCE hFE - IC
COMMON EMITTER COMMON EMITTER
2 Tc=25°C M 300 VCE=10V
V 150-100 40 J?
o 50 30 Tc=100°C
E g 100
g [li,
g o 30
0.01 0.03 0.1 0.3 1
0 4 8 12 16 20 COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE(sat) - IC SAFE OPERATING AREA
5 5 I I I I I I I I I I I
g 3 COMMON EMITTER 'f I/ff,. (PULSED) IT. )K10ms
:9 Ic/IB=10 IC MAX. 1/ I I I I
'iifli: Tc=25°C (CONTINUOUS) , A ....2f100ms
<: g 1 t
m 3: NN .w. N
g M a 1 \ Jii1s \ k
"iiy 0.5 V N N , N
'ii S? :DC OPERATION \ l
r925, 0.3 E 0.5-Tc--25t
g E 5 - THERAMAL LIMITED l lt I
Td 3:: 0.3 l l l
M > (D k k
._1 0.1 U l) \\
O o k y
0.05 U l \ I
0.01 0.03 0.1 0.3 1 g S/B LIMITED \ l
COLLECTOR CURRENT 10 (A) 8 0.1 s\
0.05 l
0 03 .).k. SINGLE NONREPETITIVE
. PULSE Tc=25°C
CURVES MUST BE DERATED VCEO 1
LINEARLY WITH INCREASE MAX.
IN TEMPERATURE.
5 10 30 100 300
COLLECTOR-EMITTER VOLTAGE VCE (V)
2 2001-11-05
TOSHIBA 2SC2073A
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-11-05
:
www.loq.com
.
