2SC2068 ,SILICON NPN TRIPLE DIFFUSED TYPE(PCT PROCESS)TOSHIBA IMiScRETfr/()PT01 Sl, IHIIHDH?ESU DDD?HEE l Ir/9097250 TOSHIBA (DISCRETE/OPTO) 50Q707466 D ..
2SC2073A ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER AND VERTICAL OUTPUT APPLICATIONSELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcurr ..
2SC2075 ,Silicon NPN Power Transistors TO-220 packageTOSHIBA f0ISCRfrTE/0PT0y Sl, os:Fvrizso EIE||37H7IJ 3 r9097250 TOSHTBA di:nii'bRirrE/oPTos SEC 0747 ..
2SC2078 ,NPN Epitaxial Planar Silicon Transistor 27MHz RF Power Amplifier ApplicationsOrdering number:EN462ENPN Epitaxial Planar Silicon Transistor2SC207827MHz RF Power Amplifier Applic ..
2SC2078. ,NPN Epitaxial Planar Silicon Transistor 27MHz RF Power Amplifier ApplicationsOrdering number:EN462ENPN Epitaxial Planar Silicon Transistor2SC207827MHz RF Power Amplifier Applic ..
2SC2086 , NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers in HF band Mobile radio applications)
2SD400 ,Low-Frequency Power Amp, Electronic Governor ApplicationsAbsolute Maximum Ratings at Ta= 25''C unitCollector to Base Voltage VCBO (- )25 VCollector to Emitt ..
2SD401 , SILICON EPITAXAL PLANAR TRANSISTOR(GENERAL DESCRIPTION)
2SD401 , SILICON EPITAXAL PLANAR TRANSISTOR(GENERAL DESCRIPTION)
2SD401A ,POWER TRANSISTORS(2A,150V,25W)ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
Collector cut-off current
IE = 0, Va; = -150/150v,
..
2SD415 ,Audio Frequency Power AmplifierDATA SHEETSILICON POWER TRANSISTOR2SB548, 549/2SD414, 415PNP/NPN SILICON EPITAXIAL TRANSISTOR ..
2SD467 , Silicon NPN Epitaxial
2SC2068
SILICON NPN TRIPLE DIFFUSED TYPE(PCT PROCESS)
TOSHIBA f1yISCRETE/0PT01 Si, mi:0nionrisio Mliriuuai, l T
9097250 TOSHIBA (DISCRETE/OPTO) - bor: 0746!) D r)". 31~l3
SILICON NPN TRIPLE DIFFUSEDTYPE (PCT PROCESS) F., ', 2SC2 .'68 l
Unit in mm
COLOR TV- CHROMA OUTPUT .APPL ICAT IONS. .
.. asnud, Jifh'd-iAV4 .
FEATURES: ' ..
. High Voltage t VCEQ=3OOV
. qull c.orysctor Output Capacitance I C°b=4.0pF (May)
mmm 7:3qu 97m.
. . .:.« ‘
|____4
MAXIMUM RATINGS (TgéZSOC) . 3 .:
CHARACTERISTIC SYMBOL RAT ING UNIT . Mi ati
Collector-Base Voltage VCBO 300 V "i n 3 g
' - d g
Col1eetor-Emiuer Voltage VCEO 300 V _u?,%,§. g
Emitter-Base Voltage VEBQ 5 V f? air
_ ."" "em - L BKSE
Collector Gurrent Ic Jo mA a COLLECTOR
Base Current IB 20 mht. a EMITTER . .
_ q . ' . . (COLLECTOR CONNECTED TO TAB)
Collector Power Dissipation. PC 1.5 ll .
. . q. "JEDEC ", To-80'd
Junction Temperature Tj L50 '.0 _
- EIAJ . . -
Storage 'lleniperature Range Tstg -55-150 00. TOSHIBA . 'd-10PIB
Weight P=1-4g
ELECTRICKL CHARKCTERISTICS (Ta=25°C)
CHARACTERISTIC SYMBOL TEST 'CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=24OV, Ar-o - - 1.0 tih
Emitter Cut-off Current IEBO VEB=5V, 10:0 - - 1.0 tth
hFE(1) VCE=10V, IC=O.5mA 20 - -
DC current Cain hFE(2) vCE=1ov, Ic=20mA 30 - 200
iu'r",1"/,'ifti,'f:g, vcmsm c=wm mm - - 1.0 v
Transition Frequency " VCE=20V, Ic=20mA 75 95 - MHz
Collector Output Capacitance Cob VcB=20V, IE=O, f=lMHz - - 4.0 pl?
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This Material Copyrighted By Its Respective Manufacturer
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CoLLEtypoR-EMrrTiim VOLTAGE vag (v) COLLECTOR CURRENT 10 (mA)
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g A 5 A
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COLLECTOR CURRENT Ic (mA) COLLECTOR-BAM VOLTAGE VCB (V)
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This Material Copyrighted By Its Respective Manufacturer
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