2SC2036 ,TOSHIBA TRANSTSTOR SILICON NPN EPITAXIAL TYPETOSHIBA 4H)ISCRlrTlr/()pT()1. 3H 1M:IHUH?ESU 0001920 Cl .9097250 TOSHIBA (DISCRETEIOPTO)39c 01920 D ..
2SC2053 , NPN EPITAXIAL PLANAR TYPE(for RF amplifiers on VHF band Mobile radio applications)
2SC2053 , NPN EPITAXIAL PLANAR TYPE(for RF amplifiers on VHF band Mobile radio applications)
2SC2053 , NPN EPITAXIAL PLANAR TYPE(for RF amplifiers on VHF band Mobile radio applications)
2SC2055 , NPN EPITAXIAL PLANAR TYPE(for RF amplifiers on VHF band portable or hand-held radio applications)
2SC2058S , High-frequency Amplifier Transistor(25V, 50mA, 300MHz)
2SD350A , Silicon NPN Power Transistors
2SD356 , 2SD356
2SD358 , 2SD356
2SD362 , Silicon NPN Power Transistors
2SD362 , Silicon NPN Power Transistors
2SD386A ,NPN Triple Diffused Planar Type Silicon Transistor For Vertical Deflection Output of Television
2SC2036
TOSHIBA TRANSTSTOR SILICON NPN EPITAXIAL TYPE
TOSHIBA Il)LilCelrT'fr/()p'l'()+ 3cl mi:lrrvr7iesio 001115130 Cl [r
9097250 TOSHIBA (DrSCRETliittpPT07
39C 01920 D "r-ar-az
SEMICONDUCTOR E: F 9 V91} TOSHIBA TRAN8T8TDR
2802 0 3 6
TECHNICAL DATA SILICDN NPN EPITAXIAL TYPE(PCI‘ PROCESSM' I
O 27MB: MMttTttMtteim
O 27MB: RF Power Amp] Hier Applications
Unit lnmm
6 2.95 ' 0.05
o 1WFir)sr-"itfst%ltiittr4WFrry'e--"
f i 'tttimdb-Cat-s,
. 0 Recomended for 1W Mobile Radio Output
Stage and Driver Stage of 4W Transmitter
l A E B MAXIMUM RATINGS(Ta=25'C)
CHARACTERISTIC SYMBOL RATING U
away . -e--Alis5ItlE Kurt, 80 V
'rt-tvel) ch 80 y
= , 95' . "<-AltlNtlE VEBO 5 V 2.3 2.3 g
a v a a I tt lc 1 A .Ql 3.
1 \ y ' I tit Is, l A l 2 t
a, v a a ta 9t Pe 1 W 1.EMt'N'ER
gt 9 m E T; l 50 'c 2. COLLECTOR
. 3.315%
E: g E E Tug -55si50 C
JEDEC T0-126
t2:hTdimNttyo'drarttcrtw2Pfct_ci, EHAJ _
The inside metal of dotted line iseonneeted
to collector lead. TOSHIBA 2-8PIA
V TPeegttAC46eatm
Eiwmét ELECTRICAL CHARACTERISTICS(Ta=25'C) MOUNTING KIT NsAC46C
CHARACTERISTIC SYMBOL CONDITION MIN. TYP. MAX. UNIT
= v a a L e m a m 1cm vca=sov. IE=0 - -- 0.1 ph
a v ' a L t m I: m Icsm yeaseov, neE-zzon - - 0.1 mA
= t , ' L - E? It a Inc VEB=5Vy Icno - - on gtA
E m I tth ta . g hrs: vcg-zv, Ic=150mA too - - -
ote'.cctvgrrssutt9QE VCE(sal) Ic-SOOmA. 13-20:!“ - - 0.7 V
4-2 . 1 t' y JMEEE v.3 Vm=2v, Ic= 500m. - 0.9 - V
r9799; ymaa " vcflov. Ic=loonA - 150 - ME:
= v a a m t tr' I Cob vcs=xov. Irro, f=lmz - l 2 - "
*PCTittrWt'itgnT1esSto
Produced by Perfect Crystal Device Technology.
TOSHIBA CORPORATION 105
---, _ 02314-- 0203é~1X
==——————_—_————_
TOSHIBA 4H)1:SCefrTE/()PT()y 3=1 oc0niyri'asuo 000132]. a fr
9Q97250 TOSHIBA (DfSCRETE/OPTO)
i9diiiiaai" - D 1131-933
SEMICONDUCTOR
TECHNICAL DATA ;-
STATIC CHARACTERISTICS II.
-s"-=Qttt 13 (mA) “V7 'C'ii; JMEEE
Kas- V a:ivity
COMMON
EM ITTER
TI Fa 251:
Ic -Vcs:
1200 sie)!, hrs-lt:
COMMON BUTTER I000
1000 Tn - 251: a
Ci 500
J 800 H 300 .
600 ’9
g 'rs. Iros " 2V
Ts - 25T
o 1 2 3 q s 6 om 0.03 0.05 0.1 0.3 0.5 t 3 5
srve'.a:t'a'btttlE Visit? =v9MItE low
106 TOSHIBA CORPORATION
(2,90- - o 203C-a)1
TOSHIBA fI)IScRETli:/0pT01
3n DEUHuqmsn unumea u T
TOSHIBA tl0rSCRETE/OPTO)
39c 01922 "6* -r--i3liiry
SEMICONDUCTOR
TECHNICAL DATA
2SC2036
VCMMI) _ Ic
fr- IE
= t y Irma
"'1'fflh, 3iy70
f E 10/13 .. 25 Cl
- 25 t;
12 T. g looo
, " .. 500
0.3 300
E 0.! .1' 100
n 0.05 N 50
; 0.03
tytn 10
0.01 0.03 o.m 0.1 0.3 0.5 1 3 -D.01 -0.03 -0.05 -0.1 -0.3 -0.5 - l - 3
avrpMtN low =,'v'eit lam
Cob - Vets Pe - TB _
500 d_zgm _
COMMON BASE T
300 (~1MH2
Tn- 26t: A
“éloo it
J 30 K
El 10 n 3
Js 5 2
av! ' '"s-smbylttE chM
10 30 50 too 300 0 50 75 I l l 5
Ml8iih1lE T105)
TOSHIBA CORPORATION
g2S't?--d 2036-3X
www.ic-phoenix.com
.
