2SC1959 ,Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applicationsapplications. Complementary to 2SA562TM. Maximum Ratings (Ta 25°C)Characteristics Symbol ..
2SC1959-Y , Power Silicon NPN Transistor
2SC1969 , NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)
2SC1969 , NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)
2SC1972 , NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)
2SC1972 , NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)
2SD2599 ,Silicon NPN Power Transistors TO-3P(H)IS package2SD2599 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2599 HORIZONTAL DEFLECTION O ..
2SD2604 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON) HIGH POWER SWITCHING, HAMMER DRIVE AND PULSE MOTOR DRIVE APPLICATIONSAPPLICATIONS qftAftQ “7+0, TTa.nn0 High DC Current Gain : hFE=2000 (Min.) if o . o :I 'ii0 Low Satu ..
2SD2623 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SD2624 ,NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
2SD2627 ,Color TV Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
2SD2627LS ,NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
2SC1959
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications
2SC1959 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SC1959 Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications Excellent hFE linearity : hFE (2) = 25 (min): VCE = 6 V, IC = 400 mA 1 watt amplifier applications. Complementary to 2SA562TM.
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C)
Note: hFE (1) classification O: 70~140, Y: 120~240, GR: 200~400
hFE (2) classification O: 25 (min), Y: 40 (min)
Unit: mm
Weight: 0.21 g (typ.)
