2SC1940 ,NPN SILICON TRANSISTORFEATURES
The 28C1940 is designed for use in driver stages of audio
frequency amplifiers.
I ..
2SC1940 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
SYMBOL
CHARACTERISTIC
hFE1
hFE2
DC Current Gai ..
2SC1941 ,NPN SILICON TRANSISTORFEATURES . High total power dissipation and high breakdown voltage: (0.729353) (01037)
1.0 IN at 2 ..
2SC1942 , HIGH VOLTAGE POWER SWITCHING TV HORIZONTAL DEFLECTION OUTPUT
2SC1944 , NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)
2SC1944 , NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)
2SD2578 ,NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SD2579 ,NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SD2581 ,NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output ApplicationsFeatures Package Dimensions · High speed.unit:mm · High breakdown voltage (V =1500V).CBO2039D · Hig ..
2SD2581 ,NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SD2583 ,AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORSFEATURESPACKAGE DIMENSIONS• Low VCE(sat)in millimeters (inches)VCE(sat) = 0.15 V Max (@lC/lB = 1.0 ..
2SD2586 ,Silicon NPN Power Transistors TO-3P(H)IS package2SD2586 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2586 HORIZONTAL DEFLECTION O ..
2SC1940
