2SC1923 ,Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier ApplicationsApplications Small reverse transfer capacitance: C = 0.7 pF (typ.) re Low noise figure: NF ..
2SC1927 ,NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USEDATA SHEETSILICON TRANSISTOR2SC1927NPN SILICON EPITAXIAL DUAL TRANSISTORFOR DIFFERENTIAL AMPLIFIE ..
2SC1940 ,NPN SILICON TRANSISTORFEATURES
The 28C1940 is designed for use in driver stages of audio
frequency amplifiers.
I ..
2SC1940 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
SYMBOL
CHARACTERISTIC
hFE1
hFE2
DC Current Gai ..
2SC1941 ,NPN SILICON TRANSISTORFEATURES . High total power dissipation and high breakdown voltage: (0.729353) (01037)
1.0 IN at 2 ..
2SC1942 , HIGH VOLTAGE POWER SWITCHING TV HORIZONTAL DEFLECTION OUTPUT
2SD2568 , Power Transistor (400V, 0.5A)
2SD2573 ,Power DeviceAbsolute Maximum Ratings T = 25°C0.7±0.1a0.7±0.1Parameter Symbol Rating Unit 1.15±0.21.15±0.2Colle ..
2SD2573 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SD2576 , Power Transistor (60V, 3A)
2SD2578 ,NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SD2579 ,NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC1923
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications
2SC1923 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
2SC1923 High Frequency Amplifier Applications
FM, RF, MIX, IF Amplifier Applications Small reverse transfer capacitance: Cre = 0.7 pF (typ.) Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C) Gpe
Figure 1
Note: hFE classification R: 40~80, O: 70~140, Y: 100~200 (* NF � 5.0dB max)
Unit: mm
Weight: 0.21 g (typ.)
